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Volumn 187, Issue 2, 1998, Pages 234-239

Metalorganic vapor phase epitaxy of manganese gallide thin films and growth temperature dependence of its crystal structure

(4) Ishii, M a,b Iwai, S a Ueki, T a Aoyagi, Y a

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

Author keywords

Mn3Ga; Mn8Ga5; MOVPE; Phase diagram; TCM; TMG

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHASE DIAGRAMS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING MANGANESE COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

MANGANESE GALLIDE;

SEMICONDUCTING FILMS;

EID: 0032069430 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00876-2 Document Type: Article

Times cited : (3)

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