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Volumn 227-230, Issue PART 2, 1998, Pages 1123-1126

A-Si:H/c-Si heterostructures prepared by 55 kHz glow discharge high-rate deposition technique

Author keywords

Amorphous hydrogenated silicon; Density of states; Glow discharge; Heterostructure; Low frequency

Indexed keywords

AMORPHOUS FILMS; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC DENSITY OF STATES; FILM GROWTH; FILM PREPARATION; GLOW DISCHARGES; HETEROJUNCTIONS; HYDROGENATION; INTERFACES (MATERIALS);

EID: 0032068751     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00289-0     Document Type: Article
Times cited : (6)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.