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Volumn 227-230, Issue PART 2, 1998, Pages 1123-1126
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A-Si:H/c-Si heterostructures prepared by 55 kHz glow discharge high-rate deposition technique
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Author keywords
Amorphous hydrogenated silicon; Density of states; Glow discharge; Heterostructure; Low frequency
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Indexed keywords
AMORPHOUS FILMS;
CHARGE CARRIERS;
CHEMICAL VAPOR DEPOSITION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRONIC DENSITY OF STATES;
FILM GROWTH;
FILM PREPARATION;
GLOW DISCHARGES;
HETEROJUNCTIONS;
HYDROGENATION;
INTERFACES (MATERIALS);
AMORPHOUS HYDROGENATED SILICON;
CAPACITANCE VOLTAGE PROPERTIES;
INTERFACE STATE DENSITY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
AMORPHOUS SILICON;
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EID: 0032068751
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00289-0 Document Type: Article |
Times cited : (6)
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References (11)
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