Hydrogenated amorphous silicon deposited by glow discharge of SiH4 diluted with He: Photoluminescence and electroluminescence in the visible region

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 254-258

  Luterova K ^a,b   Knapek P ^a   Stuchlik J ^a   Kocka J ^a   Poruba, A ^c   Kudrna, J ^d   Maly P ^d   Valenta, J ^d   Dian, J ^d   Honerlage B ^b   Pelant, I ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^c BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^d CHARLES UNIVERSITY   (Czech Republic)

Author keywords

a Si:H; He diluted SiH4; MW ECR PECVD

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; ELECTRON CYCLOTRON RESONANCE; GLOW DISCHARGES; HYDROGENATION; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILANES; THERMAL EFFECTS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING FILMS;

EID: 0032067504     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00063-5     Document Type: Article

References (9)

1. M. Stutzmann, Phys. Status Solidi B 192 (1995) 273.
2. R.A. Street, in: J.I. Pankove (Vol. Ed.), Semiconductors and Semimetals, Vol. 21, Part B, Academic Press, Orlando, 1984, p. 197.
3. M.H. Ludwig, Crit. Rev. Solid State Mater. Sci. 21 (4) (1996) 265.
4. D.J. Wolford, J.A. Reimer, B.A. Scott, Appl. Phys. Lett. 42 (1983) 369.
5. K. Akiyama, A. Ogiwara, H. Ogawa, Jpn. J. Appl. Phys. 33 (Part 1) (1994) 5793.
6. I. Pelant, K. Luterová, P. Knápek, J. Kočka, J. Stuchlík, A. Poruba, S. Surendan, J. Valenta, J. Dian, B. Hönerlage, Phys. Status Solidi A 165 (1998) 25.
7. M. Rosenbauer, M. Stutzmann, H.D. Fuchs, S. Finkbeiner, J. Weber, J. Luminescence 57 (1993) 153.
8. J. Kudrna, I. Pelant, S. Surendan, J. Stuchlík, A. Poruba, P. Malý, J. Non-Crystalline Solids, submitted.
9. S. Furukawa, N. Matsumoto, Phys. Rev. B 31 (1985) 2114.