Effects of the addition of CF4, Cl2, and N2 to O2 ECR plasma on the etch rate, selectivity, and etched profile of RuO2 film

Materials Research Society Symposium - Proceedings

Volumn 493, Issue , 1998, Pages 183-188

  Lee, E J ^a   Kim, J S ^a   Kim, J W ^a   Baik, K H ^a   Lee, W J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; COMPOSITION EFFECTS; OXIDES; PERFORMANCE; PLASMAS; REACTIVE ION ETCHING;

ETCH RATE;

RUTHENIUM COMPOUNDS;

EID: 0031674190     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)