On the nature of the paramagnetic defects in hydrogenated amorphous silicon nitride

Solid State Communications

Volumn 98, Issue 8, 1996, Pages 745-750

  Chen, D Q ^a   Viner, J M ^a   Taylor, P C ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

A. disordered systems; C. point defects; D. electronic states (localized); E. electron paramagnetic resonance

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HYDROGENATION; PARAMAGNETIC RESONANCE; POINT DEFECTS; THERMAL EFFECTS;

PARAMAGNETIC DEFECTS;

SILICON NITRIDE;

EID: 0030151706     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00080-4     Document Type: Article

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