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Journal of Materials Science Letters

Volumn 17, Issue 10, 1998, Pages 845-847

Cross-section TEM and optical characterization of porous silicon multilayer stacks

(5) Martin Palma R J a,b Herrero, P b Guerrero Lemus, R a Moreno, J D a Martinez Duart J M a,b

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; ELECTROCHEMISTRY; ENERGY GAP; ETCHING; MULTILAYERS; PARTICLE SIZE ANALYSIS; POROSITY; POROUS SILICON; REFRACTIVE INDEX; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

POROUS SILICON MULTILAYER STACKS (PSMS);

SEMICONDUCTING FILMS;

EID: 0032066429 PISSN: 02618028 EISSN: None Source Type: Journal
DOI: 10.1023/A:1006654926348 Document Type: Article

Times cited : (33)

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