Study of AlN coatings for microstrip gas chambers

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 409, Issue 1-3, 1998, Pages 33-36

  Buzulutskov, A ^a   Bondar, A ^a   Mironenko, L ^a   Nagaslaev, V ^a   Shekhtman, L ^a   Tatarinov, A ^a   Kascheev, S ^b   Belyanin, A ^c   Blaut Blachev, A ^c   Bouilov, L ^c   Spitsyn, B ^c  

^a BUDKER INSTITUTE OF NUCLEAR PHYSICS   (Russian Federation)

^b BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

^c Institute of Physical Chemistry Moscow   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON EMISSION; FILM PREPARATION; MICROSTRIP DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SUBSTRATES; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM NITRIDE; MICROSTRIP GAS CHAMBERS;

PARTICLE DETECTORS;

EID: 0032066398     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)01229-1     Document Type: Article

References (6)

1. R. Bouclier, M. Capeans, M. Hoch, G. Million, L. Ropelewski, F. Sauli, T. Temmel-Ropelewski, IEEE Trans. Nucl. Sei. NS-43 (1996) 1220, and references therein.
2. W.G. Gong, R. Bellazzini, A. Brez, R. Raffo, G. Spandre, in: D. Contardo, F. Sauli (Eds.), Proc. Int. Workshop on Micro-Strip Gas Chambers, Lyon, France, 1995, IPN-Lyon, p. 265, and references therein.
3. A. Bondar, A. Buzulutskov, V. Nagaslaev, L. Shekhtman, A. Tatarinov, A. Blaut-Blachev, L. Bouilov, B. Spitsyn, Nucl. Instr. and Meth. A 394 (1997) 265.
4. See for example N.F. Mott, E.A. Davis, Electronic processes in non-crystalline materials, Clarendon, Oxford, 1971.
5. M. Razeghi, A. Rogalski, J. Appl. Phys. 79 (1996) 7433, 7448.
6. M.C. Benjamin, C. Wang, R.F. Davis, R.J. Nemanich, Appl. Phys. Lett. 64 (1994) 3288.