SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 376, Issue 1-3, 1997, Pages

Effect of surfactant on Ge crystallization on Si in solid phase epitaxy

(3) Aizawa, N a Homma, Y b Tomita, M b

a TOKYO GAKUGEI UNIVERSITY (Japan)

b NTT CORPORATION (Japan)

Author keywords

Germanium; Semiconductor semiconductor heterostructure; Silicon; Single crystal epitaxy; Solid phase epitaxy

Indexed keywords

AMORPHOUS MATERIALS; ARSENIC; CRYSTALLIZATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA;

SOLID PHASE EPITAXY;

GERMANIUM;

EID: 0031123986 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(96)01586-5 Document Type: Article

Times cited : (3)

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