Mobility of oligomeric thin film transistors prepared at rapid growth rates by pulsed laser deposition

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1240-1244

  Salih, A J ^a   Marshall, J M ^a   Maud, J M ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Atomic force microscopy; Carrier mobility; Laser ablation; Organic semiconductors; Thin film transistors

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EVAPORATION; FILM GROWTH; LASER ABLATION; OLIGOMERS; PULSED LASER APPLICATIONS; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES;

OLIGOMERIC THIN FILM TRANSISTORS; PULSED LASER DEPOSITION (PLD);

THIN FILM TRANSISTORS;

EID: 0032066062     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00306-8     Document Type: Article

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