Electrical property of high-fluence metal ion implanted sapphire and its thermal annealing effects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 141, Issue 1-4, 1998, Pages 441-445

  Kobayashi, Tomohiro ^a   Terai, Takayuki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Al2O3; Electrical properties; Ion implantation; RBS

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; IRON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; THERMAL EFFECTS;

HIGH FLUENCE IMPLANTED SPECIMENS;

ALUMINA;

EID: 0032065937     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00154-2     Document Type: Article

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