A study of the growth-mechanism and properties of microcrystalline silicon-germanium

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1069-1073

  Ganguly, G ^a,b   Fukawa, M ^a   Ikeda, T ^a   Matsuda, A ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Solarex Corp   (United States)

Author keywords

Growth mechanism; Microcrystalline silicon germanium; Plasma enhanced chemical vapor deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; FILM PREPARATION; GERMANIUM; HYDROGEN; PLASMA APPLICATIONS; SILICON;

MICROCRYSTALLINE SILICON GERMANIUM; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CRYSTALLINE MATERIALS;

EID: 0032065189     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00295-6     Document Type: Article

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