Treatment uniformity of plasma immersion ion implantation studied with three-dimensional model systems

Surface and Coatings Technology

Volumn 103-104, Issue , 1998, Pages 218-221

  Ensinger, W ^a   Hochbauer T ^a   Rauschenbach, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Homogeneity of implantation; Plasma immersion ion implantation; Trench implantation

Indexed keywords

ION BEAMS; IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SURFACE TREATMENT;

HOMOGENEITY; ION BEAM TREATMENT; LATERAL IMPLANTATION CONCENTRATION; PLASMA IMMERSION ION IMPLANTATION; TREATMENT UNIFORMITY; TRENCH IMPLANTATION;

ION IMPLANTATION;

EID: 0032065107     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(98)00396-X     Document Type: Article

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