Thermal stability of NbN films deposited on GaAs substrates

Vacuum

Volumn 50, Issue 1-2, 1998, Pages 45-48

  Hotovy I ^a   Huran, J ^b   Buc D ^a   Srnanek R ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; NIOBIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

NIOBIUM NITRIDE; SCHOTTKY BARRIER MEASUREMENT; SCHOTTKY CONTACTS;

FILM PREPARATION;

EID: 0032058088     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00012-8     Document Type: Article

References (6)

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