Reactively sputtered titanium nitride Schottky contacts on n-GaAs and their thermal stability

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 285-288

  Eftekhari, G ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; INTERFACES (MATERIALS); NITROGEN; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING; STOICHIOMETRY; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

PARTIAL PRESSURE EFFECTS; RAPID THERMAL ANNEALING; REACTIVE SPUTTERING; SCHOTTKY CONTACTS;

ELECTRIC CONTACTS;

EID: 0030109240     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/3/004     Document Type: Article

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