Growth of Si1-yCy/Si- and Si1-x-yGexCy/Si-multiple quantum wells using molecular beam epitaxy

Thin Solid Films

Volumn 318, Issue 1-2, 1998, Pages 158-162

  Hartmann, R ^a   Grutzmacher D ^a   Muller E ^a   Gennser, U ^a   Dommann, A ^b   Schroter P ^b   Warren, P ^c  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b Neutechnikum Buchs   (Switzerland)

^c EPFL   (Switzerland)

Author keywords

Molecular beam epitaxy; Multiple quantum wells; Photoluminescence

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HIGH RESOLUTION X RAY DIFFRACTION (HRXRD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032050794     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01157-7     Document Type: Article

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