Gate-controlled double electron layer tunnelling transistor and single transistor digital logic applications

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 921-922

  Moon, J S ^a   Simmons, J A ^a   Blount, M A ^a   Baca, W E ^a   Reno, J L ^a   Hafich, M J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HETEROJUNCTIONS; LOGIC GATES; NAND CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE ELECTRON LAYER TUNNELLING TRANSISTORS (DELTT); QUANTUM TRANSISTORS;

GATES (TRANSISTOR);

EID: 0032047418     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980650     Document Type: Article

References (7)

1. CHANG, L.L., ESAKI, L., and TSU, R.: 'Resonant tunnelling in semiconductor double barriers', Appl. Phys. Lett., 1974, 24, pp. 593-595
2. BROWN, E.R., SOLLNER, T.C.L.G., PARKER, C.D., GOODHUE, W.D., and CHEN, C.L.: 'Oscillations up to 420GHz in GaAs/AlAs resonant tunnelling diodes', Appl. Phys. Lett., 1989, 55, pp. 1777-1779
3. SEN, S., CAPASSO, F., CHO, A.Y., and SIVCO, D.L.: 'Parity generator circuit using a multistate resonant tunnelling bipolar transistor', Electron. Lett., 1988, 24, pp. 1506-1507
4. KINARD, W.B., WEICHOLD, M.W., and KIRK, W.P.: 'Fabrication of a gated gallium arsenide heterostructure resonant tunnelling diode', J. Vac. Sci. Technol. B, 1990, 8, pp. 393-396
5. CHOU, S.Y., ALLEE, D.R., PEASE, R.F.W., and HARRIS, J.S., Jr.: 'Observation of electron resonant tunnelling in a lateral dual-gate resonant tunnelling field-effect transistor', Appl. Phys. Lett., 1989, 55, pp. 176-178
6. SIMMONS, J.A., BLOUNT, M.A., MOON, J.S., BACA, W.E., RENO, J.L., and HAFICH, M.J.: 'Unipolar complementary bistale memories using gate-controlled negative differential resistance in a 2D-2D quantum tunnelling transistor'. IEDM Tech. Dig., 1997,
7. EISENSTEIN, J.P., PFEIFFER, L.N., and WEST, K.W.: 'Field-induced resonant tunnelling between parallel two-dimensional electron systems', Appl. Phys. Lett., 1991, 58, pp. 1497-1499