An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography

Semiconductor Science and Technology

Volumn 13, Issue 4, 1998, Pages 345-349

  McNally, Patrick J ^a   Curley, J ^a   Krier, A ^b   Mao, Y ^b   Richardson, J ^b   Tuomi, T ^c   Taskinen, M ^c   Rantamaki R ^c   Prieur, E ^c   Danilewsky, A ^d  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b LANCASTER UNIVERSITY   (United Kingdom)

^c AALTO UNIVERSITY   (Finland)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); INFRARED DEVICES; LIQUID PHASE EPITAXY; MAGNETORESISTANCE; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; SYNCHROTRONS;

INDIUM GALLIUM ARSENIDE; SYNCHROTRON X RAY TOPOGRAPHY;

HETEROJUNCTIONS;

EID: 0032046158     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/4/001     Document Type: Review

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