Normal and inverted Meyer-Neldel rule in hot-wire CVD deposited nanocrystalline silicon

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 2, 1998, Pages

  Bruggemann R ^a,b   Rojahn, M ^a   Rosch M ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; NANOSTRUCTURED MATERIALS; PHOSPHORUS; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING;

HOT WIRE ASSISTED CHEMICAL VAPOR DEPOSITION (HWCVD); MEYER-NELDEL RULE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING SILICON;

EID: 0032045751     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199804)166:23.0.CO;2-H     Document Type: Article

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