A 33-cm-Diagonal High-Resolution TFT-LCD with Fully Self-Aligned a-Si TFTs

IEICE Transactions on Electronics

Volumn E79-C, Issue 8, 1996, Pages 1103-1108

  Hirano, Naoto ^a   Ikeda, Naoyasu ^a   Nishida, Shinichi ^a   Kaneko, Setsu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

A Si; Ion implantation (ion doping); LCD; Self alignment; TFT

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRODES; FABRICATION; GATES (TRANSISTOR); ION IMPLANTATION; PLASMA APPLICATIONS; THIN FILM TRANSISTORS;

ION DOPING; PLASMA CHEMICAL VAPOR DEPOSITION; SILICIDE; SOFTWARE PACKAGE SPICE; UNIFORM PARASITIC CAPACITANCE; VOLTAGE SHIFT;

LIQUID CRYSTAL DISPLAYS;

EID: 0030217687     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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