High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 886-887

  Lammert, R M ^a   Ungar, J E ^a   Oh, S W ^a   Qi, H ^a   Chen, J S ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

LINEAR OPTICAL POWER; NONABSORBING MIRRORS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0032045334     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980638     Document Type: Article

References (7)

1. MAJOR, J.S., Jr., and WELCH, D.F.: 'Single InGaAs-GaAs distributed Bragg reflector laser diodes operating at 1083nm', Electron. Lett., 1994, 29, pp. 2121-2122
2. GULGAZOV, V.N., ZHOA, H., NAM, D., MAJOR, J.S., Jr., and KOCH, T.L.: 'Tunable high-power AlGaAs distributed Bragg reflector laser diodes', Electron. Lett., 1997, 33, pp. 58-59
3. CHEN, T.R., CHEN, P.C., UNGAR, J., and BAR-CHAIM, N.: 'High power operation of multiquantum well DFB lasers at 1.3μm', Electron. Lett., 1994, 29, pp. 2121-2122
4. MILLER, L.M., BEERNINK, K.J., VERDEYEN, J.T., COLEMAN, J.J., HUGHES, J.S., SMITH, G.M., HONIG, J., and COCKERILL, T.M.: 'Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser', IEEE Photonics Technol. Lett., 1991, 3, pp. 6-8
5. NICHOLS, D.T., LOPATA, J., HOSON, W.S., SCIORTINO, P.F., Jr., and DUTTA, N.K.: 'DFB and DBR lasers emitting at 980nm', Electron. Lett., 1993, 29, pp. 2035-2036
6. SIN, Y.K., and HORIKAWA, H.: 'High power 0.98 μm InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers', Electron. Lett., 1993, 29, pp. 920-922
7. UNGAR, J.E., KWONG, N.S.K., OH, S.W., CHEN, J.S., and BAR CHAIM, N.: 'High power 980nm nonabsorbing facet lasers', Electron. Lett., 1994, 30, pp. 1766-1767