Tunable high-power AIGaAs distributed Bragg reflector laser diodes

Electronics Letters

Volumn 33, Issue 1, 1997, Pages 58-59

  Gulgazov, V N ^a   Zhao, H ^a   Nam, D ^a   Major Jr , J S ^a   Koch, T L ^a  

^a SDL INC   (United States)

Author keywords

Aluminium gallium arsenide; Distributed Bragg reflector lasers; Semiconductor junction lasers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFRACTION GRATINGS; ELECTRIC RESISTANCE; LASER TUNING; MIRRORS; NUMERICAL METHODS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

DISTRIBUTED BRAGG REFLECTOR LASERS; SECOND ORDER HOLOGRAPHIC GRATING; SEMICONDUCTOR JUNCTION LASERS; THRESHOLD CURRENT; TUNING MEASUREMENT;

SEMICONDUCTOR LASERS;

EID: 0031546392     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970007     Document Type: Article

References (2)

1. MAJOR, J.S., and WELCH, D.F.: 'Single-mode InGaAsIGaAs distributed Bragg reflector laser diodes operating at 1083 nm', Electron. Lett., 1993, 29, (24), pp. 2121-2122
2. MAJOR, J.S., O'BRIEN, S., GULGAZOV, V., WELCH, D.F., and LANG, R.J.: 'High-power single-mode AlGaAs DBR laser diodes operating at 856 nm', Electron. Lett., 1994, 30, (6), pp. 496-497