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Volumn 139, Issue 1-4, 1998, Pages 418-421
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Pulsed ion beam formation of highly doped GaAs layers
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Author keywords
Carrier concentration; GaAs; Implantation
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
CARRIER CONCENTRATION;
COMPUTER SIMULATION;
ELECTRIC VARIABLES MEASUREMENT;
ION BEAMS;
ION BOMBARDMENT;
ION IMPLANTATION;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
THERMODYNAMIC STABILITY;
ELECTRICAL ACTIVATION;
PULSED ION BEAM TREATMENT;
SEMICONDUCTOR DOPING;
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EID: 0032044714
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(98)00030-5 Document Type: Article |
Times cited : (5)
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References (6)
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