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Volumn 139, Issue 1-4, 1998, Pages 418-421

Pulsed ion beam formation of highly doped GaAs layers

Author keywords

Carrier concentration; GaAs; Implantation

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

EID: 0032044714     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00030-5     Document Type: Article
Times cited : (5)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.