Formation of heavily doped semiconductor layers by pulsed ion beam treatment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 122, Issue 1, 1997, Pages 35-38

  Bayazitov, R M ^a   Zakirzyanova, L Kh ^a   Khaibullin, I B ^a   Remnev, G E ^b  

^a ZAVOISKY PHYSICAL TECHNICAL INSTITUTE   (Russian Federation)

^b Nuclear Physics Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; DECOMPOSITION; DIFFUSION; ION BEAMS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

IMPURITY DISTRIBUTION; PULSED ION BEAMS;

ION IMPLANTATION;

EID: 0030733994     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00637-4     Document Type: Article

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