Localized monitoring of electromigration with early resistance change measurements

Microelectronics Reliability

Volumn 38, Issue 4, 1998, Pages 641-650

  Manca, J V ^a   Croes, K ^a   De Ceuninck, W ^a,b   D'Haeger, V ^a   D'Haen, J ^a   Depauw, P ^c   Tielemans, L ^b   De Schepper, L ^a,b  

^a HASSELT UNIVERSITY   (Belgium)

^b University Campus   (Belgium)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE MEASUREMENT; FAILURE ANALYSIS; FINITE ELEMENT METHOD; METALLIZING; PROBES; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

LOCALIZED ELECTRICAL RESISTANCE MEASUREMENT; MULTIVOLTAGE PROBES (MVP);

ELECTROMIGRATION;

EID: 0032043752     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00191-1     Document Type: Article

References (13)

1. Madden, M. C., Abratowski, E. V., Marieb, T. and Flinn, P. A. High resolution observation of void motion in passivated metal lines under electromigration stress. MRS Symp. Proc., 1992, 265, 33-38.
2. Sanchez, J. E., Kraft, O. and Arzt, E. Electromigration induced transgranular slit failures in near bamboo Al and Al- 2% Cu thin-film interconnects. Appl. Phys. Lett., 1992, 61(26), 3121-3123.
3. Kraft, O., Bader, S., Sanchez, J. E. and Arzt, E. Observation and modelling of electromigration induced void growth in Al-based interconnects. MRS Symp. Proc., 1993, 309, 199-204.
4. Kraft, O., Mockl, U. E. and Arzt, E. Shape changes of voids in bamboo lines: a new electromigration failure mechanism. Quality Reliab. Eng. Int., 1995, 11, 279-283.
5. D'Haeger, V., Studie van elektromigratie in polykristallijne Al-metaalbanen met behulp van een hoge resolutie weerstandsmeettechniek. Ph.D. Thesis, Institute for Materials Research, Diepenbeek, Belgium, 1996.
6. Verbruggen, A. H., Van Den Homberg, M. J. C., Kalkman, A. J., Kraayeveld, J. R., Willemsen, A. W. J. and Radelaar, S., Current dependence of reversible electromigration induced resistance changes in short Al-lines and interpretation of irreversible effects, in preparation.
7. Lloyd, J. R., Shatzkes, M. and Challener, D. C., Kinetic study of electromigration failure in Cr/Al-Cu thin film conductors covered with polyimide and the problem of the stress dependent activation energy. In Proc. 8th IEEE Int. Reliability Physics Symposium, 1988, pp. 216-225.
8. Jeuland, F., Influence des geometries et des conditions de test sur la competition entre les mecanismes d'origines structurale et thermique dans la degradation par electromigration des interconnexions des circuits VLSI. Ph.D. Thesis, Institut National des Sciences appliquees de Toulouse, 1991.
9. Morgan, S., De Munari, I., Scorzoni, A. and Fantini, F. Test structures for electromigration evaluation in submicron technology. Proc. 1996 IEEE Int. Conf. Microelectronic Test Structures, 1996, 9, 283-287.
10. Jeuland, F., Lormand, G., Normandon, Ph. and Boudou, A. Consequences of the cooling induced by voltage taps at the extremities of electromigration test structures. J. Appl. Phys., 1992, 71(4), 2015-2017.
11. Cosemans, P., D'Haen, J., Witvrouw, A., Proost, J., D'Olieslaeger, M., De Ceuninck, W., Maex, K. and De Schepper, L., Study of Cu diffusion in an Al-1 wt% Si-0.5 wt% Cu bond pad with an Al-I wt% Si bond wire attached using scanning electron microscopy. Microelectron. Reliab., in press.
12. Baerg, B., Crandall, R. and Wu, K., Wide line, low current electromigration in Al-Cu metallisation with refractory underlayer. IEEE/IRPS, 1994, pp. 192-197.
13. Sato, K., Patrinos, A. J., Chang, C. Y., Vook, R. W. and Schwarz, J. A. Kinetic study of electromigration in Al and Al alloy thin films by combined resistance and temperature change measurements. J. Electrochem. Soc., 1991, 138(9), 2774-2777.