Impact of latch phenomenon on low-frequency noise in SOI MOSFETs

Microelectronics Reliability

Volumn 38, Issue 4, 1998, Pages 567-570

  Jomaah, J ^a   Balestra, F ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRAPS; FLIP FLOP CIRCUITS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

CARRIER NUMBER FLUCTUATIONS;

MOSFET DEVICES;

EID: 0032043205     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00208-4     Document Type: Article

References (14)

1. Simoen, E. and Claeys, C., Solid-State Electronics, 1996, 39(7), 949-960.
2. Chen, J., Fang, P., Ko, P. K., Hu, C., Soloman, R., Chan, T. Y., Sodini, C. G., Proceedings IEEE SOS/SOI Technology Conference, Key West, Florida, 1990, p. 40.
3. Simoen, E., Magnusson, U., Rolondaro, A. L. P. and Claeys, C., IEEE Trans. Electron. Devices. 1994. ED-41, 330.
4. Jomaah, J., Balestra, F. and Ghibaudo, G., Proceedings of the 23rd ESSDERC, 1993, p. 111.
5. Hafez, I. M., Ghibaudo, G. and Balestra, F., IEEE Electron. Devices Letters, 1990, EDL-11, 120.
6. Colinge, J. P. IEEE Electon Devices Letters. 1988, EDL-9, 97
7. Chen, C.-E. D., Matloubian, M., Sundareson, R., Mao, B.-Y., Wei, C. C. and Pollack, G. P., IEEE Electron Devices Letters. 1988, EDL-9, 636.
8. Reimbold, G., IEEE Trans Electron Devices, 1984, ED-31, 1190.
9. Ghibaudo, G., Physica Status Solidi (a), 1987, 104, 917.
10. Mac Whorter, A. L., University of Pensylvania Press, Philadelphia, 1957, p. 207.
11. Hooge, F., Physica, 1976, B83, 14.
12. Ghibaudo, G., Roux dit Buisson, O., Nguyen-Duc, Ch., Balestra, F. and Brini, J., Physica Status Solidi (a), 1991, 124, 571.
13. Hung, K. K., Ko, P. K., Hu, C. and Cheng, Y. C. IEEE Trans. Electron. Devices, 1990, ED-37(3), 654.
14. Sun, S. C. and Plummer, J. D. IEEE Trans Electron Devices, 1980, ED-27, 1497.