Base transit time minimization with fixed base dopant dose

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 667-670

  Winterton, S S ^a   Tarr, N G ^a  

^a CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ENERGY GAP; SEMICONDUCTOR DOPING;

BASE TRANSIT TIME; BIPOLAR JUNCTION TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0032041619     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00252-9     Document Type: Article

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