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1
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0029290641
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GaAs MQW modulators integrated with silicon CMOS
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K. W. Goossen, J. A. Walker, L. A. D'Asaro, S. P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. D. Bacon, D. Dahringer, L. M. F. Chirovsky, A. L. Lentine, and D. A. B. Miller, "GaAs MQW modulators integrated with silicon CMOS," IEEE Photon. Technol. Lett., vol. 7, pp. 360-362, 1995.
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Tseng, B.5
Leibenguth, R.6
Kossives, D.7
Bacon, D.D.8
Dahringer, D.9
Chirovsky, L.M.F.10
Lentine, A.L.11
Miller, D.A.B.12
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3
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0030114193
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High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS
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A. L. Lentine, K. W. Goossen, J. A. Walker, L. M. F. Chirovsky, L. A. D'Asaro, S. P. Hui, B. J. Tseng, R. E. Leibenguth, J. E. Cunningham, W. Y. Jan, J.-M. Kuo, D. W. Dahringer, D. P. Kossives, D. D. Bacon, G. Livescu, R. L. Morrison, R. A. Novotny, and D. B. Buchholz, "High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS," IEEE J. Select. Topics Quantum Electron., vol. 2, pp. 77-84, 1996.
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Lentine, A.L.1
Goossen, K.W.2
Walker, J.A.3
Chirovsky, L.M.F.4
D'Asaro, L.A.5
Hui, S.P.6
Tseng, B.J.7
Leibenguth, R.E.8
Cunningham, J.E.9
Jan, W.Y.10
Kuo, J.-M.11
Dahringer, D.W.12
Kossives, D.P.13
Bacon, D.D.14
Livescu, G.15
Morrison, R.L.16
Novotny, R.A.17
Buchholz, D.B.18
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Wood, T.H.6
Burrus, C.A.7
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5
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0027627246
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GaAs 850 nm modulators solder-bonded to silicon
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan, "GaAs 850 nm modulators solder-bonded to silicon," IEEE Photon. Technol. Lett., vol. 5, pp. 776-778, 1993.
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Goossen, K.W.1
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0026256262
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Optical receiver array in silicon bipolar technology with self-aligned, low parasitic III/V detectors for DC-1 Gbit/s parallel links
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J. Wieland, H. Melchior, M. Q. Kearley, C. Morris, A. J. Moseley, M. G. Goodwin, and R. C. Goodfellow, "Optical receiver array in silicon bipolar technology with self-aligned, low parasitic III/V detectors for DC-1 Gbit/s parallel links," Electron. Lett., vol. 27, pp. 2211-2212, 1991.
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7
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0027809486
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Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850-1064 nm
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K. W. Goossen, M. B. Santos, J. E. Cunningham, and W. Y. Jan, "Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850-1064 nm," IEEE Photon. Technol. Lett., vol. 5, pp. 1392-1394, 1993.
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Goossen, K.W.1
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8
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0026366566
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Alignable epitaxial liftoff of GaAs materials with selective deposition using polyimide diaphragms
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C. Camperi-Ginestet, M. Hargis, N. Jokerst, and M. Allen, "Alignable epitaxial liftoff of GaAs materials with selective deposition using polyimide diaphragms," IEEE Photon. Technol. Lett., vol. 3, pp. 1123-1125, 1993.
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9
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0030101664
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Large arrays of spatial light modulators hybridized to silicon integrated circuits
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T. L. Worchesky, K. J. Ritter, R. Martin, and B. Lane, "Large arrays of spatial light modulators hybridized to silicon integrated circuits," Appl. Opt., vol. 35, pp. 1180-1186, 1996.
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Worchesky, T.L.1
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10
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0028496036
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4 × 4 arrays of FET-SEED embedded control 2 × 1 optoelectronic switching nodes with electrical fan-out
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A. L. Lentine, R. A. Novotny, T. J. Cloonan, L. M. F. Chirovsky, L. A. D'Asaro, G. Livescu, S. Hui, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, K. G. Glogovsky, and T. K. Woodward, "4 × 4 arrays of FET-SEED embedded control 2 × 1 optoelectronic switching nodes with electrical fan-out," IEEE Photon. Technol. Lett., vol. 6, pp. 1126-1128, 1994.
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Leibenguth, R.E.11
Glogovsky, K.G.12
Woodward, T.K.13
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11
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0029229865
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Wavelength optimization of quantum well modulators in smart pixels
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G. D. Boyd, L. M. F. Chirovsky, A. L. Lentine, and G. Livescu, "Wavelength optimization of quantum well modulators in smart pixels," Appl. Opt., vol. 34, pp. 323-326, 1995.
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Boyd, G.D.1
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12
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0029273596
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Optical bandwidth considerations in p-i-n multiple quantum well modulators
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan, "Optical bandwidth considerations in p-i-n multiple quantum well modulators," J. Lightwave Technol., vol. 13, pp. 461-464, 1995.
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Goossen, K.W.1
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Optimization and tolerance analysis of QCSE modulators and detectors
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Optoelectronic ATM switch employing hybrid silicon CMOS/GaAs FET-SEED's
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Optical Interconnects in Broadband Switching Architectures, T. J. Cloonan, Ed.
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A. L. Lentine. D. J. Reiley, R. A. Novotny, R. L. Morrison, J. M. Sasian, M. G. Beckman, D. B. Buchholz, S. J. Hinterlong, T. J. Cloonan, G. W. Richards, and F. B. McCormick, "Optoelectronic ATM switch employing hybrid silicon CMOS/GaAs FET-SEED's," in Optical Interconnects in Broadband Switching Architectures, T. J. Cloonan, Ed., Proc. SPIE, vol. 2692, pp. 100-108, 1996.
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Beckman, M.G.6
Buchholz, D.B.7
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Cloonan, T.J.9
Richards, G.W.10
McCormick, F.B.11
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15
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0029708193
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Multiple attachment GaAs-on-Si hybrid optoelectronic/VLSI chips
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K. W. Goossen, B. Tseng, S. P. Hui, J. A. Walker, R. Leibenguth, L. M. F. Chirovsky, and A. Krishnamoorthy, "Multiple attachment GaAs-on-Si hybrid optoelectronic/VLSI chips," in Dig. IEEE/LEOS 1996 Summer Top. Meet, on Smart Pixels, p. 24.
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Goossen, K.W.1
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Chirovsky, L.M.F.6
Krishnamoorthy, A.7
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16
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3643069582
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to be published
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K. W. Goossen, S. P. Hui, B. Tseng, J. A. Walker, and R. Leibenguth, to be published.
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Goossen, K.W.1
Hui, S.P.2
Tseng, B.3
Walker, J.A.4
Leibenguth, R.5
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17
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0024733299
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Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors
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R. H. Yan, R. J. Simes, and L. A. Coldren, "Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors," IEEE Photon. Technol. Lett., vol. 1, pp. 272-274, 1989.
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A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, J. E. Henry, and W. Y. Jan, Appl. Phys. Lett., vol. 57, pp. 2315-2318, 1990.
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19
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0026154061
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High-power extremely shallow quantum well modulators
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K. W. Goossen, L. M. F. Chirovsky, R. A. Morgan, J. E. Cunningham, and W. Y. Jan, "High-power extremely shallow quantum well modulators," IEEE Photon. Technol. Lett., vol. 3, pp. 448-450, 1991.
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Jan, W.Y.5
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20
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0028369752
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Electroabsorption in ultranarrow-barrier GaAs/AlGaAs multiple quantum well modulators
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan, "Electroabsorption in ultranarrow-barrier GaAs/AlGaAs multiple quantum well modulators," Appl. Phys. Lett., vol. 64, pp. 1071-1073, 1994.
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Fast escape of photogenerated carriers out of shallow quantum wells
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J. Feldmann, K. W. Goossen, D. A. B. Miller, A. M. Fox, J. E. Cunningham, and W. Y. Jan, "Fast escape of photogenerated carriers out of shallow quantum wells," Appl. Phys. Lett., vol. 59, pp. 66-69, 1991.
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Appl. Phys. Lett.
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Jan, W.Y.6
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25
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0031168890
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Modulator-driver circuits for optoelectronic VLSI
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T. K. Woodward, A. V. Krishnamoorthy, K. W. Goossen, J. A. Walker, B. Tseng, J. Lothian, S. Hui, and R. Leibenguth, "Modulator-driver circuits for optoelectronic VLSI," IEEE Photon. Technot. Lett., vol. 9. pp. 839-841, 1997.
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Tseng, B.5
Lothian, J.6
Hui, S.7
Leibenguth, R.8
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26
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0027543045
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Interleaved-contact electroabsorption modulator using doping-selective electrodes with 20-95 °C operating range
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K. W. Goossen, J. E. Cunningham, W. Y. Jan, and D. A. B. Miller, "Interleaved-contact electroabsorption modulator using doping-selective electrodes with 20-95 °C operating range," IEEE Photon. Technol. Lett. vol. 5, pp. 181-183, 1993.
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Goossen, K.W.1
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27
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0028482581
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Stacked diode electroabsorption modulator
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan, "Stacked diode electroabsorption modulator," IEEE Photon. Technol. Lett., vol. 6, pp. 936-938, 1994.
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IEEE Photon. Technol. Lett.
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