Epitaxial growth of a-axis oriented YBa2Cu3O7-y/LaNiO3 heterostructures on (100) SrTiO3 by pulsed laser deposition

Physica C: Superconductivity and its Applications

Volumn 297, Issue 3-4, 1998, Pages 247-252

  Wu, Wenbin ^a,b   Wong, K H ^a   Chan, P W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

A axis oriented YBCO LNO herterostuctures; LaNiO3 films; Pulsed laser deposition

Indexed keywords

CONDUCTIVE FILMS; EPITAXIAL GROWTH; EXCIMER LASERS; HIGH TEMPERATURE SUPERCONDUCTORS; LANTHANUM COMPOUNDS; LASER ABLATION; OXIDE SUPERCONDUCTORS; STRONTIUM COMPOUNDS; SUPERCONDUCTING TRANSITION TEMPERATURE; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS;

LANTHANUM NICKEL OXIDE; STRONTIUM TITANATE; YTTRIUM BARIUM COPPER OXIDE;

JOSEPHSON JUNCTION DEVICES;

EID: 0032023457     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(98)00009-4     Document Type: Article

References (17)

1. C.B. Eom, R.J. Cava, R.M. Fleming, J.M. Phillips, R.B. van Dover, J.H. Marshall, J.W.P. Hsu, J.J. Krajewski, W.F. Peck Jr., Science 258 (1992) 1766.
2. L. Klein, J.S. Dodge, C.H. Ahn, G.J. Snyder, T.H. Geballe, M.R. Beasley, A. Kapitulnik, Phys. Rev. Lett. 77 (1996) 2774.
3. X.D. Wu, S.R. Foltyn, R.C. Dye, Y. Coulter, R.E. Muenchausen, Appl. Phys. Lett. 62 (1993) 2434.
4. J.T. Cheung, P.E.D. Morgan, D.H. Lowndes, X.-Y. Zheng, J. Breen, Appl. Phys. Lett. 62 (1993) 2045.
5. A. Chainani, M. Mathew, D.D. Sarma, Phys. Rev. B 46 (1992) 9976.
6. K. Char, L. Antognazza, T.H. Geballe, Appl. Phys. Lett. 63 (1993) 2420.
7. R. Ramesh, H. Gilchrist, T. Sands, V.G. Keramidas, R. Haakenaasen, D.K. Fork, Appl. Phys. Lett. 63 (1993) 3592.
8. C.B. Eom, R.B. Van Dover, J.M. Phillips, D.J. Werder, J.H. Marshall, C.H. Chen, R.J. Cava, R.M. Fleming, D.K. Fork, Appl. Phys. Lett. 63 (1993) 2570.
9. A. Word, B. Post, E. Banks, J. Am. Chem. Soc. 70 (1957) 4911.
10. K.M. Satyalakshmi, R.M. Mallya, K.V. Ramanathan, X.D. Wu, B. Brainard, D.C. Gautier, N.Y. Vasanthacharya, M.S. Hegde, Appl. Phys. Lett. 62 (1993) 1233.
11. D. Kumar, R.D. Vispute, O. Aboelfotoh, S. Oktyabrsky, K. Jagannadham, J. Narayan, P.R. Apte, R. Pinto, J. Electron. Mater. 25 (1996) 1760.
12. T. Yu, Y.-F. Chen, Z.-G. Liu, X.-Y. Chen, L. Sun, N.-B. Ming, L.-J. Shi, Mater. Lett. 26 (1996) 73.
13. P.W. Chan, W. Wu, K.H. Wong, K.Y. Tong, J.T. Cheung, J. Phys. D 30 (1997) 957.
14. C.-C. Yang, M.-S. Chen, T.-J. Hong, C.-M. Wu, J.-M. Wu, T.-B. Wu, Appl. Phys. Lett. 66 (1995) 2643.
15. K. Kinoshita, H. Ishibashi, T. Kobayashi, Jpn. J. Appl. Phys. 33 (1994) L417.
16. Z. Trajanovic, S. Choopun, R.P. Sharma, T. Venkatesen, Appl. Phys. Lett. 70 (1997) 3461.
17. M. Mukaida, S. Miyazawa, Appl. Phys. Lett. 63 (1993) 999.