The reactions of diethylzinc on gallium-rich and arsenic-rich reconstructions of GaAs(100)

Surface Science

Volumn 401, Issue 1, 1998, Pages 34-46

  Lam, H T ^a   Venkateswaran, N ^a   Vohs, J M ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Chemisorption; Electron energy loss spectroscopy; Gallium arsenide; Growth; Models of surface chemical reactions; Thermal desorption spectroscopy; Zinc selenide

Indexed keywords

ADSORPTION; CHEMISORPTION; COMPOSITION EFFECTS; ELECTRON ENERGY LOSS SPECTROSCOPY; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE TREATMENT; TEMPERATURE PROGRAMMED DESORPTION; ZINC COMPOUNDS;

DIETHYLZINC; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032023326     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00903-5     Document Type: Article

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