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Volumn 365, Issue 1, 1996, Pages 125-135

The influence of surface structure on the reaction of dimethylzinc on GaAs(100)

(4) Venkateswaran, N a Roe, C L a Lam, H T a Vohs, J M a

a UNIVERSITY OF PENNSYLVANIA (United States)

Author keywords

Chemical vapour deposition; Chemisorption; Dimethylzinc; Electron energy loss spectroscopy; Gallium arsenide; Temperature programmed desorption

Indexed keywords

ABSORPTION; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE; TEMPERATURE PROGRAMMED DESORPTION; ZINC COMPOUNDS;

DIMETHYLZINC; DISSOCIATIVE ABSORPTION; SURFACE RECONSTRUCTION; ZINC SURFACE INTERACTION;

SURFACE TREATMENT;

EID: 0030244004 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00664-4 Document Type: Article

Times cited : (7)

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