Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB P-substrate partially inverted buried heterostructure laser diodes

IEEE Journal of Quantum Electronics

Volumn 34, Issue 3, 1998, Pages 540-547

  Kakimoto, Syouichi ^a   Watanabe, Hitoshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Distributed feedback lasers; Laser resonators; Optical communication; Quantum well lasers; Semiconductor lasers

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; LASER RESONATORS; LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SUBSTRATES;

BANDGAP ENERGY; THRESHOLD CURRENTS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0032022634     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.661464     Document Type: Article

References (71)

1. D. N. Payne and W. A. Gambling, "Zero material dispersion in optical fibers," Electron. Lett., vol. 11, pp. 176-178, 1975.
2. T. Miya, Y. Terunuma, T. Hosaka, and T. Miyashita, "Ultimate low-loss single-mode fiber at 1.55 μm," Electron. Lett., vol. 15, pp. 106-108, 1979.
3. K. Utaka, S. Akiba, K. Sasaki, and Y. Matsushima, "Room-temperature CW operation of distributed-feedback buried-heterostructure In-GaAsp/InP lasers emitting at 1.57 μm," Electron. Lett., vol. 17, pp. 961-963, 1981.
4. Y. Itaya, T. Matsuoka, Y. Nakano, Y. Suzuki, K. Kuroiwa, and T. Ikegami, "New 1.5 μm wavelength GaInAsP/InP distributed feedback laser," Electron. Lett., vol. 18, pp. 1006-1008, 1982.
5. Y. Uematsu, H. Okuda, and J. Kinoshita, "Room-temperature CW operation of 1.3 μm distributed-feedback GaInAsP/InP lasers," Electron. Lett., vol. 18, pp. 857-858, 1982.
6. T. Matsushima, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, and T. Ikegami, "CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength region," Electron. Lett., vol. 18, pp. 27-28, 1982.
7. K. Sakai, K. Utaka, S. Akiba, and Y. Matsushima, "1.5 μm range InGaAsP/InP distributed feedback lasers," IEEE J. Quantum Electron., vol. QE-18, pp. 1272-1278, 1982.
8. H. Okuda, Y. Hirayama, J. Kinoshita, H. Furuyama, and Y. Uematsu, "High-quality 1.3 μm GaInAsP/InP BH-DFB lasers with first-order gratings," Electron. Lett., vol. 19, pp. 941-943, 1983.
9. H. Asahi, Y. Kawamura, Y. Noguchi, T. Matsuoka, and H. Nagai, "Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers," Electron. Lett., vol. 19, pp. 507-509, 1983.
10. L. D. Westbrook, A. W. Nelson, P. J. Fiddyment, and J. S. Evans, "Continuous-wave operation of 1.5 μm distributed-feedback ridge-waveguide lasers," Electron. Lett., vol. 20, pp. 227-226, 1984.
11. M. Yamaguchi, M. Kitamura, I. Mito, S. Murata, and K. Kobayashi, "Highly efficient single-longitudinal-mode operation of anti-reflection-coated 1.3 μm DFB-DC-PBH LD," Electron. Lett., vol. 20, pp. 233-235, 1984.
12. Y. Hirayama, H. Okuda, J. Kinoshita, H. Furuyama, and Y. Uematsu, "Monolithic integration of low-threshold-current 1.3 μm GaInAsP/InP DFB lasers," Electron. Lett., vol. 20, pp. 463-465, 1984.
13. M. Kitamura, M. Yamaguchi, S. Murata, I. Mito, and K. Kobayashi, "Low-threshold and high-temperature single-longitudinal-mode operation of 1.55 μm-band DFB-DC-PBH LD's," Electron. Lett., vol. 20, pp. 595-596, 1984.
14. Y. Suzuki, H. Nagai, Y. Noguchi, T. Matsuoka, and K. Kurumada, "High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate," Electron. Lett., vol. 20, pp. 881-882, 1984.
15. W. T. Tsang, R. A. Logan, N. A. Olsson, L. F. Johnson, and C. H. Henry, "Heteroepitaxial ridge-grown distributed feedback laser at 1.55 μm," Appl. Phys. Lett., vol. 45, pp. 1272-1274, 1984.
16. H. Temkin, G. J. Dolan, N. A. Olsson, C. H. Henry, R. A. Logan, R. F. Kazarinov, and L. F. Johnson, "1.55 μm InGaAsP ridge waveguide distributed feedback laser," Appl. Phys. Lett., vol. 45, pp. 1178-1180, 1984.
17. 1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 45, pp. 784-786, 1984.
18. K. Wakao, K. Kihara, T. Tanahashi, H. Sudo, T. Kusanoki, H. Tabuchi, H. Ishikawa, S. Isozumi, S. Yamakoshi, and H. Imai, "Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order grating," Electron. Lett., vol. 21, pp. 321-322, 1985.
19. M. Razeghi, R. Blondeau, M. Krakowski, J. C. Bouley, M. Papuchon, B. D. Cremoux, and J. P. Duchemin, "Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD," IEEE J. Quantum Electron., vol. QE-21, pp. 507-511, 1985.
20. Z. L. Liau, D. C. Flanders, J. N. Walpole, and N. L. DeMeo, "A novel GaInAsP/InP distributed feedback laser," Appl. Phys. Lett., vol. 46, pp. 221-223, 1985.
21. H. Temkin, G. J. Dolan, R. A. Logan, R. F. Kazarinov, N. A. Olsson, and C. H. Henry, "Ridge waveguide distributed feedback lasers with electron beam defined grating," Appl. Phys. Lett., vol. 46, pp. 105-107, 1985.
22. T. L. Koch, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, L. A. Coldren, R. A. Linke, W. T. Tsang, R. A. Logan, L. F. Johnson, R. F. Kazarinov, R. Yen, and D. P. Wilt, "1.55 μm InGaAsP distributed feedback vapor phase transported buried heterostructure," Appl. Phys. Lett., vol. 47, pp. 12-14, 1985.
23. K. Wunstel, A. Mozer, M. Schilling, G. Luz, K. Losch, H. Schweizer, G. Schemmel, and O. Hildebrand, "High-speed 1.3 μm DFB laser with modified DCPBH structure," Electron. Lett., vol. 22, pp. 1144-1145, 1986.
24. H. Burkhard, E. Kuphal, and H. W. Dingel, "Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating," Electron. Lett., vol. 22, pp. 802-803, 1986.
25. H. Nagai, T. Matsuoka, Y. Noguchi, Y. Suzuki, and Y. Yoshikuni, "InGaAsP/InP distributed feedback buried heterostructure lasers with both facets cleaved structure," IEEE J. Quantum Electron., vol. QE-22, pp. 450-457, 1986.
26. K. Kihara, K. Kamei, H. Sudo, T. Tanahashi, T. Kusunoki, S. Isozumi, H. Ishikawa, and H. Imai, "High-power, wide-bandwidth, 1.55 μm-wavelength GaInAsP/InP distributed feedback laser," Electron. Lett., vol. 23, pp. 941-942, 1987.
27. H. Soda, K. Kihara, M. Furutsu, M. Matsuda, H. Seki, S. Ogita, H. Ishikawa, and H. Imai, "Wide temperature range stable single-mode operation in weakly coupled asymmetric mirror reflectivity DFB lasers," Electron. Lett., vol. 23, pp. 724-725, 1987.
28. B. Broberg, S. Nilsson, and T. Tanbun-Ek, "Very low-threshold 1.53 μm DFB lasers by VPE transport," Electron. Lett., vol. 23, pp. 624-625, 1987.
29. C. J. Armistead, B. R. Butler, S. J. Clements, A. J. Collar, D. J. Moule, and S. A. Wheeler, "DFB ridge waveguide lasers at λ = 1.5 μm with first-order gratings fabricated using electron beam lithography," Electron. Lett., vol. 23, pp. 592-593, 1987.
30. Y. Itaya, M. Oishi, M. Nakano, K. Sato, Y. Kondo, and Y. Imamura, "Low-threshold operation of 1.5 μm buried-heterostructure DFB lasers grown entirely by low-pressure MOVPE," Electron. Lett., vol. 23, pp. 193-194, 1987.
31. T. Nishibe, M. Funamizu, H. Okuda, H. Furuyama, Y. Hirayama, M. Nakamura, and M. Iwamoto, "Entirely VPE-grown 1.5 μm DFB lasers with low threshold currents," Electron. Lett., vol. 23, pp. 34-35, 1987.
32. K. Chinen, K. Gen-ei, H. Suhara, A. Tanaka, T. Matsuyama, K. Kondo, and Y. Muto, "Low-threshold 1.55 μm InGaAsP/InP buried heterostructure distributed feedback lasers," Appl. Phys. Lett., vol. 51, pp. 273-275, 1987.
33. S. Nilsson, T. Tanbun-Ek, and B. Broberg, "Flat-surface buried heterostructure distributed feedback lasers operating in a single mode at 1.5 μm with low chirp," Appl. Phys. Lett., vol. 51, pp. 2082-2084, 1987.
34. A. Talneu, D. Rondi, M. Krakowski, and R. Blondeau, "Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD," Electron. Lett., vol. 24, pp. 609-611, 1988.
35. H. Yamada, T. Sasaki, S. Takano, T. Numai, M. Kitamura, and I. Mito, "Low threshold operation of 1.55 μm GaInAsP/InP DFB-BH LD's entirely grown by MOVPE on InP gratings," Electron. Lett., vol. 24, pp. 147-149, 1988.
36. B. Fernier, C. Artigue, D. Bonnevie, L. Goldstein, A. Perales, and J. Benoit, "Low-threshold 1.5 μm DFB laser grown by GSMBE," Appl. Phys. Lett., vol. 25, pp. 768-770, 1989.
37. W. Thulke and S. Illek, "1.53 μm DFB laser on semi-insulating InP substrate with very low threshold current," Electron. Lett., vol. 26, pp. 933-934, 1990.
38. S. Kakimoto, A. Takemoto, Y. Sakakibara, Y. Nakajima, and M. Fujiwara, "Threshold currents of 1.2-1.55 μm P-substrate buried crescent laser diodes," IEEE J. Quantum Electron., vol. 28, pp. 1631-1635, 1992.
39. N. K. Dutta, S. G. Napholtz, A. B. Piccirilli, and G. Przybylek, "InGaAsP distributed feedback multiquantum well laser," Appl. Phys. Lett., vol. 48, pp. 1419-1421, 1986.
40. M. Kitamura, T. Sasaki, S. Takano, H. Yamada, H. Hasumi, and I. Mito, "Low-threshold, high-power, single-longitudinal-mode operation in 1.5 μm multiple-quantum-well distributed-feedback laser diodes," Electron. Lett., vol. 24, pp. 1424-1426, 1988.
41. T. Sasaki, S. Takano, N. Henmi, H. Yamada, M. Kitamura, H. Hasumi, and I. Mito, "1.5 μm λ/4 shifted multiple quantum well distributed feedback laser diodes," Electron. Lett., vol. 24, pp. 1408-1409, 1988.
42. M. Kitamura, S. Takano, N. Henmi, T. Sasaki, H. Yamada, Y. Shinohara, H. Hasumi, and I. Mito, "1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE," Electron. Lett., vol. 24, pp. 1405-1406, 1988.
43. A. Perales, L. Goldstein, A. Accard, B. Fernier, F. Leblond, C. Gourdain, and P. Brosson, "High power performance DFB-MQW lasers at 1.5 μm grown by GSMBE," Electron. Lett., vol. 26, pp. 236-238, 1990.
44. M. Kitamura, H. Yamazaki, T. Sasaki, N. Kida, H. Hasumi, and I. Mito, "250 kHz spectral linewidth operation of 1.5 μm multiple quantum well DFB-LD's," IEEE Photon. Technol. Lett., vol. 2, pp. 310-311, 1990.
45. S. J. Wang, L. J. P. Ketelsen, V. R. Mccrary, S. G. Napholtz, and W. V. Werner, "Dynamic and CW linewidth measurements of 1.55-μm InGaAs-InGaAsP multiquantum well distributed feedback lasers," IEEE Photon. Technol. Lett., vol. 2, pp. 775-777, 1990.
46. P. Speier, J. Bouayad-Amine, U. Cebulla, K. Dutting, M. Klenk, G. Laube, H. P. Mayer, R. Weinmann, K. Wunstel, E. Zielinski, and O. Hildebrand, "10 Gbit/s MQW-DFB-SIBH lasers entirely grown LPMOVPE," Electron. Lett., vol. 27, pp. 863-864, 1991.
47. H. Yamada, T. Okuda, T. Torikai, T. Uji, M. Shibutani, and S. Tomida, "High modulation frequency low distortion 1.3 μm MQW-DFB-LD's for subcarrier multiplexed fiber-optic feeder systems," Electron. Lett., vol. 29, pp. 1944-1945, 1993.
48. S. Kakimoto, A. Takemoto, Y. Sakakibara, Y. Nakajima, M. Fujiwara, H. Namizaki, H. Higuchi, and Y. Yamamoto, "Wavelength dependence of 1.2-1.55 μm InGaAsP/InP p-substrate buried crescent laser diodes," IEEE J. Quantum Electron., vol. 24, pp. 29-35, 1988.
49. A. Takemoto, Y. Sakakibara, Y. Nakajima, M. Fujiwara, S. Kakimoto, H. Namizaki, and W. Susaki, "1.3 μm InGaAsP/InP distributed-feedback p-substrate partially inverted buried-heterostructure laser diodes," Electron. Lett., vol. 23, pp. 546-547, 1987.
50. S. Kakimoto, Y. Nakajima, Y. Sakakibara, H. Watanabe, A. Takemoto, and W. Susaki, "Extremely narrow spectral linewidth and low chirping of the MQW-DFB-PPIBH laser diodes," IEEE J. Quantum Electron., vol. 26, pp. 1460-1466, 1990.
51. A. Takemoto, Y. Ohkura, Y. Kawama, Y. Nakajima, T. Kimura, N. Yoshida, S. Kakimoto, and W. Susaki, "1.3 μm distributed feed back laser diode with a grating accurately controlled by a new fabrication technique," IEEE J. Quantum Electron., vol. 25, pp. 2072-2077, 1989.
52. H. Kogelnik and C. V. Shank, "Coupled-wave theory of distributed feedback lasers," J. Appl. Phys., vol. 43, pp. 2327-2335, 1972.
53. K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, and T. Tanbun-Ek, "1.5 μm phase-shifted DFB lasers for single-mode operation," Electron. Lett., vol. 20, pp. 80-81, 1984.
54. K. Utaka, S. Akiba, K. Sakai, and Y. Matsushima, "λ/4-shifted InGaAsP DFB lasers by simultaneous holographic exposure of positive and negative photoresists," Electron. Lett., vol. 20, pp. 1008-1010, 1984.
55. _ , "Longitudinal-mode behavior of λ/4-shifted InGaAsP/InP DFB lasers," Electron. Lett., vol. 21, pp. 367-369, 1985.
56. S. Koentjoro, N. Eda, K. Furuya, and Y. Suematuu, "1.5 μm phase-shifted DFB laser by EBX and mass-transport technique," Electron. Lett., vol. 21, pp. 525-527, 1985.
57. M. Okai, S. Tsuj, M. Hirao, and H. Matsumura, "New high-resolution positive and negative photoresist method for λ/4-shifted DFB lasers," Electron. Lett., vol. 23, pp. 370-371, 1987.
58. H. Soda, K. Wakao, H. Sudo, T. Tanahashi, and H. Imai, "GaInAsP/InP phase-adjusted distributed feedback lasers with a step-like nonuniform stripe width structure," Electron. Lett., vol. 20, pp. 1016-1018, 1984.
59. B. Broberg, S. Koentjoro, K. Furuya, and Y. Suematsu, "1.54 μm InGaAsP/InP distributed feedback lasers with mass-transport windows," Appl. Phys. Lett., vol. 47, pp. 4-6, 1985.
60. M. Okai, N. Chione, H. Taira, and T. Harada, "Corrugation-pitch-modulated phase-shifted DFB laser," IEEE Photon. Technol. Lett., vol. 1, pp. 200-201, 1989.
61. K. Kobayashi and I. Mito, "High light output-power single-longitudinal-mode semiconductor laser diodes," J. Lightwave Technol., vol. LT-3, pp. 1202-1210, 1985.
62. S. Kakimoto and H. Watanabe, "Absorption loss coefficient of the active layer for 1.48 μm bulk and MQW lasers," IEEE J. Quantum Electron., vol. 34, pp. 110-112, 1998.
63. H. C. Casey, Jr., "Variation of intervalence band absorption with hole concentration in p-type InP," Appl. Phys. Lett., vol. 44, pp. 82-83, 1984.
64. W. Streifer, R. Burnham, and D. R. Scifres, "Effect of external reflector on longitudinal modes of distributed feedback lasers," IEEE J. Quantum Electron., vol. QE-11, pp. 154-161, 1972.
65. M. Asada and Y. Suematsu, "Density-matrix theory of semiconductor lasers with relaxation broading model-gain and gain-suppression in semiconductor lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 434-442, 1985.
66. M. Asada, A. Kameyama, and Y. Suematsu, "Gain and intervalence band absorption in quantum-well lasers," IEEE J. Quantum Electron., vol. QE-20, pp. 745-753, 1984.
67. A. Perales, L. Goldstein, B. Fernier, C. Starck, J. L. Lievin, F. Poingt, and J. Benot, "Multi-quantum-well lasers emitting at 1.55 μm grown by GSMBE," Electron. Lett., vol. 25, pp. 1350-1352, 1989.
68. M. Rosenzweig, M. Mohrle, H. Duser, and H. Venghaus, "Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers," IEEE J. Quantum Electron., vol. 27, pp. 1804-1811, 1991.
69. Y. Arakawa and A. Yariv, "Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 1666-1674, 1985.
70. B. Fenier, F. Gerard, P. Pagonod, G. Michaud, G. Ripoche, and G. Vendrome, "1.3 μm SLMQW DFB lasers with high quantum efficiency for -40-85°C operation," Electron. Lett., vol. 31, pp. 2174-2175, 1995.
71. T. R. Chen, P. C. Chen, J. Unger, and N. Bar-Chaim, "High power operation of multiquantum well DFB lasers at 1.3 μm," Electron. Lett., vol. 31, pp. 1344-1345, 1995.