EBIC investigation of edge termination techniques for silicon carbide power devices

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 111-114

  Raghunathan, R ^a   Baliga, B J ^a  

^a Power Semiconductor Research Cent   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ION IMPLANTATION; POWER ELECTRONICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

ARGON ION IMPLANT TERMINATION; EDGE TERMINATION; ELECTRON BEAM INDUCED CURRENT (EBIC) MODE; FLOATING METAL FIELD RING (FMR); RESISTIVE SCHOTTKY BARRIER FIELD PLATE (RESP); SILICON CARBIDE POWER DEVICES;

SEMICONDUCTOR DIODES;

EID: 0029724691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)