Nuclear reaction analysis of deuterium in ultrathin films of SiO2 on Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 204-208

  Baumvol, I J R ^a   Stedile, F C ^b   Radtke, C ^b   Freire Jr , F L ^c   Gusev, E ^d   Green, M L ^e   Brasen, D ^e  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b Instituto de Quimica   (Brazil)

^c PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^d RUTGERS UNIVERSITY   (United States)

^e LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL BONDS; DESORPTION; DEUTERIUM; DIFFUSION; DISSOLUTION; ETCHING; SILICA; SILICON; ULTRATHIN FILMS; VACUUM APPLICATIONS;

NUCLEAR REACTION ANALYSIS;

NUCLEAR PHYSICS;

EID: 0032020886     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00680-0     Document Type: Article

References (12)

1. 2 Interface-3, The Electrochemical Society, Pennington, USA, 1996, p. 3.
2. K.F. Schuegraf, C. Hu, Semicond. Sci. Technol. 9 (1994) 989.
3. T.W. Hickmott, J. Appl. Phys. 48 (1977) 723.
4. F.B. McLean, IEEE Trans. Nucl. Sci. NS 27 (1980) 1651.
5. J.W. Lyding, K. Hess, I.C. Kizilyalli, Appl. Phys. Lett. 68 (1996) 2526.
6. A.E.T. Kuiper, M.F.C. Willemsem, A.M.L. Theunissen, W.M. de Wijgert, F.H.P.M. Habraken, R.H.G. Tijhaar, W.F. van der Weg, J.T. Chen, J. Appl. Phys. 59 (1986) 2765.
7. F.J. Feigl, R. Gale, H. Chew, C.W. Magee, D.R. Young, Nucl. Instr. and Meth. B 1 (1984) 348.
8. S.M. Myers, J. Appl. Phys. 61 (1987) 5428.
9. I.J.R. Baumvol, F.C. Stedile, J.-J. Ganem, S. Rigo, I. Trimaille, J. Electrochem. Soc. 142 (1995) 1205.
10. H. Fukuda, T. Ueno, H. Kawarada, I. Ohdomari, Jpn. J. Appl. Phys. 32 (1993) L569.
11. J.E. Shelby, J. Appl. Phys. 48 (1977) 3387.
12. K.L. Brower, Phys. Rev. B 42 (1990) 3444.