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Volumn 348, Issue 3, 1996, Pages

A channeled ion energy loss study of the surfactant-mediated growth of Ge on Si(100)

(3) Boshart, M A a Baues III, A A a Seiberling, L E a

a University of Florida ^* (United States)

Author keywords

Adatoms; Computer simulations; Epitaxy; High energy ion scattering (HEIS); Ion solid interactions, scattering, channeling; Semiconducting surfaces; Single crystal epitaxy; Surface structure

Indexed keywords

ANTIMONY; COMPUTER SIMULATION; DEPOSITION; EPITAXIAL GROWTH; MONOLAYERS; MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE; SURFACES;

ADATOMS; CHANNELED ION ENERGY LOSS STUDY; HIGH ENERGY ION SCATTERING; ION SOLID INTERACTION; SCATTERED ION ENERGY DISTRIBUTION; SURFACTANT MEDIATED GROWTH; TRANSMISSION ION CHANNELING;

SEMICONDUCTOR GROWTH;

EID: 0030108261 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(95)01100-5 Document Type: Article

Times cited : (8)

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