Ion bombardment induced relaxation of strained AlGaAs/GaAs heterostructures studied by the complementary use of RBS-channeling and X-ray synchrotron radiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 1062-1067

  Turos, A ^a,b   Wierzchowski, W ^a   Wieteska, K ^c   Wendler, E ^d   Wesch, W ^d   Graeff, W ^e   Grotzschel R ^f   Strupinski W ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c INSTITUTE OF ATOMIC ENERGY   (Poland)

^d FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^e DESY   (Germany)

^f INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Epitaxial layers; Ion bombardment; RBS channeling; XRD

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; ION BOMBARDMENT; LATTICE CONSTANTS; NUCLEATION; PLASTIC DEFORMATION; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SYNCHROTRON RADIATION;

WHITE BEAM TOPOGRAPHY;

ION IMPLANTATION;

EID: 0032020291     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00802-1     Document Type: Article

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