Study of Cu diffusion in an Al-1 wt.%Si-0.5 wt.%Cu bond pad with an Al-1 wt.%Si bond wire attached using scanning electron microscopy

Microelectronics Reliability

Volumn 38, Issue 3, 1998, Pages 309-315

  Cosemans, P ^a   D'Haen, J ^a   Witvrouw, A ^b   Proost, J ^b   D'Olieslaeger, M ^a   De Ceuninck, W ^a   Maex, K ^b   De Schepper, L ^a  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; BONDING; COPPER; DIFFUSION IN SOLIDS; ELECTRIC WIRE; ELECTROMIGRATION; GRAIN BOUNDARIES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

BOND PADS; BOND WIRES; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

INTEGRATED CIRCUIT TESTING;

EID: 0032017820     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00051-6     Document Type: Article

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