A new model for the (2 x 1) reconstructed CoSi2-Si(100) interface

Philosophical Magazine Letters

Volumn 77, Issue 3, 1998, Pages 147-152

  Buschmann, V ^a   Fedina, L ^a,c   Rodewald, M ^a   Van Tendeloo, G ^b  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE TREATMENT;

COBALT DISILICIDE; SELF INTERSTITIALS; SPLIT INTERSTITIALS;

INTERFACES (MATERIALS);

EID: 0032017026     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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