A new hydrodynamic principle for CVD reactors: The boundary condition control

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 783-796

  Kuhn, W S ^a,b  

^a CNRS   (France)

^b Stein Heurtey SA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; COMPUTER SIMULATION; DIFFUSION; EFFICIENCY; HEAT TRANSFER; HYDRODYNAMICS; MASS TRANSFER; SEMICONDUCTOR GROWTH; TEMPERATURE CONTROL; THIN FILMS;

CHEMICAL EFFICIENCY; CHEMICAL VAPOR DEPOSITION REACTORS; GROWTH RATE HOMOGENEITY; HYDRODYNAMIC PRINCIPLE; STATIC SUSCEPTOR;

CHEMICAL REACTORS;

EID: 0030143128     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/022     Document Type: Article

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