Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector

IEEE Photonics Technology Letters

Volumn 10, Issue 2, 1998, Pages 252-254

  Deppe, D G ^a,b   Kudari, A ^a   Huffaker, D L ^a,b   Deng, H ^a   Deng, Q ^a   Campbell, J C ^a,b  

^a The University of Texas at Austin   (United States)

^b IEEE   (United States)

Author keywords

Cavities; Cavity resonators; Photodetectors; Photodiodes; Quantum wells; Quantum well devices

Indexed keywords

BANDWIDTH; LASER MODES; LASER RESONATORS; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

RESONANT CAVITY PHOTODETECTORS;

PHOTODETECTORS;

EID: 0032002180     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.655375     Document Type: Article

References (10)

1. A. Chin and T. Y. Chang, "Enhancement of quantum efficiency in thin photodiodes through absorptive resonance," J. Lightwave Technol., vol. 9, pp. 321-328, 1991.
2. K. Kishino, S. Unlu, J.-I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, "Resonant cavity-enhanced (RCE) photodetectors," IEEE J. Quantum Electron., vol. 27, pp. 2025-2034, 1991.
3. R. Kuchibhotla, A. Srinivasan, J. C. Campbell, C. Lei, D. G. Deppe, Y. S. He, and B. G. Streetman, "Low-voltage high-gain resonant-cavity avalanche photodiode," IEEE Photon. Technol. Lett., vol. 3, pp. 354-356, 1991.
4. E. Roan and K. Cheng, "Long-wavelength (1.3 μm) luminescence in InGaAs strained quantum-well structures grown on GaAs," Appl. Phys. Lett., vol. 59, pp. 2688-2690, 1991.
5. R. Mirin, J. Ibbetson, K. Nishi, A. Gossard, and J. Bowers, "1.3 μm photoluminescence from InGaAs quantum dots on GaAs," Appl. Phys. Lett., vol. 67, pp. 3795-3797, 1995.
6. K. Mukai, N. Ohtsuka, H. Shoji, and M. Sugawara, "Emission from discrete levels in self-formed InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 68, pp. 3013-3015, 1996.
7. J. C. Campbell, D. L. Huffaker, H. Deng, and D. G. Deppe, "Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength," Electron. Lett., vol. 33, pp. 1339-1340, 1997.
8. F. DeMartini, M. Marrocco, P. Mataloni, L. Crescentini, and R. Loudon, "Spontaneous emission in the optical microscopic cavity," Phys. Rev. A, vol. 43, pp. 2480-2497, 1991.
9. M. Born and E. Wolf, Principles of Optics. New York: Pergamon, 1980, pp. 51-70.
10. O. Baklenov, D. L. Huffaker, A. Anselm, D. G. Deppe, and B. G. Streetman, "Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy," J. Appl. Phys., vol. 82., Dec. 15, 1997.