A theoretical analysis of quantum noise in semiconductor lasers operating with self-sustained pulsation

IEICE Transactions on Electronics

Volumn E81-C, Issue 2, 1998, Pages 290-298

  Yamada, Minoru ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Quantum noise; Saturable absorbing region; Self sustained pulsation; Semiconductor laser; Transverse mode

Indexed keywords

FEEDBACK; LASER MODES; LASER PULSES; LEAKAGE CURRENTS; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MODELS;

QUANTUM NOISE;

SEMICONDUCTOR LASERS;

EID: 0032001386     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. S. Matsui, H. Takiguchi, H. Hayashi, S. Yamamoto, S. Yano, and T. Hijikata, "Suppression of feedback-induced noise in short-cavity V-channeled substrate inner stripe lasers with self-oscillation," Appl. Phys. Lett., vol.43, no.3, pp.219-221, 1983.
2. S. Yamashita, A. Ohishi, T. Kajimura, M. Inoue, and Y. Fukui, "Low-noise AIGaAs lasers grown by organometallic vapor phase epitaxy," IEEE J. Quantum Electron., vol.25, no.6, pp.I483-1488, 1989.
3. M. Yamada, "Theoretical analysis of noise-reduction effect in semiconductor lasers with help of self-sustained pulsation phenomena," J. Appl. Phys., vol.79, no.l, pp.61-71, 1996.
4. M. Yamada, "A theoretical analysis of self-sustained pulsation phenomena in narrow-stripe semiconductor lasers," IEEE J. Quantum Electron., vol.29, no.5, pp.1330-1336, 1993.
5. T. Takayama, O. Imafuji, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, and K. Itoh, "800mW peak-power selfsustained pulsation GaAlAs laser diodes," IEEE J. Selected Topics in Quantum Electron., vol.1, no.2, pp.562568, 1995.
6. T. Goto, N. Hayashi, A. Ibaraki, D. Ide, K. Furusawa, K. Yodoshi, and T. Niina, "Low-noise, high-power GaAlAs laser diode with a saturable absorbing layer," MOC'95, Technical Digest, pp.278-281, 1995.
7. H. Adachi, I. Kidoguchi, T. Fukuhisa, K. Tanaka, M. Amannoh, and A. Takamori, "Reduction of aspect ratio in 650-nm band self-sustained-pulsing lasers with saturableabsorbing layer," Jpn. J. Appl. Physics, vol.36, Part 1, no.3B, pp.1876-1879, 1997.
8. H. Haug, "Quantum-mechanical rate equations for semiconductor lasers," Phys., Rev., vol.184, no.2, pp.338-348, 1969.
9. T.L. Paoli, "Noise characteristics of stripe-geometry double-hetero-structure junction lasers operating continuously-I. Intensity noise at room temperature," IEEE J. Quantum Electron., vol.QE-11, no.4, pp.276-283, 1975.
10. M. Yamada, "Variation of intensity noise and frequency noise with the spontaneous emission factor in semiconductor lasers," IEEE J. Quantum Electron., vol.30, no.7, pp.1511-1519, 1994.
11. Y. Suematsu and M. Yamada, "Oscillation-mode and mode-control in semiconductor lasers with stripe-geometry," IECE Trans., vol.57-c, no.ll, pp.434-440, 1974.
12. M. Yamada, "Transverse and longitudinal mode control in semiconductor injection lasers," IEEE J. Quantum Electron., vol.QE-19, no.9, pp.1365-1380, 1983.