Transverse and Longitudinal Mode Control in Semiconductor Injection Lasers

IEEE Journal of Quantum Electronics

Volumn 19, Issue 9, 1983, Pages 1365-1380

  Yamada, Minoru ^a,b  

^a LUCENT TECHNOLOGIES   (United States)

^b KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS, SEMICONDUCTOR;

EID: 0020813714     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1983.1072059     Document Type: Article

References (37)

1. C. H. Gooch et al., Gallium Arsenide Lasers. London: Wiley-Interscience, 1969.
2. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Part A and B). New York: Academic, 1978.
3. H. Kressel and J. K. Bulter, Semiconductor Lasers. New York: Academic, 1977.
4. H. Namizaki, H. Kan, M. Ishi, and A. Ito, “Transverse junction-stripe-geometry double-heterostructure lasers with very low threshold current,” J. Appl. Phys., vol. 45, pp. 2785-2786, June 1974.
5. M. Nakamura, K. Aiki, N. Chinone, R. Ito, and J. Umeda, “Longitudinal-mode behaviors of mode-stabilized AlxGa1-xAs injection lasers,” J. Appl. Phys., vol. 49, pp. 4644-4648, Sept. 1978.
6. G. Lasher and F. Stern, “Spontaneous and stimulated recombination radiation in semiconductor,” Phys. Rev., vol. 133A, pp. 553-562, Jan. 1964.
7. H. C. Casey, Jr. and F. Stern, “Concentration-dependent absorption and spontaneous emission of heavily doped GaAs,” J. Appl. Phys., vol. 47, pp. 631-643, Feb. 1976.
8. F. Stern, “Calculated spectral dependence of gain in excited GaAs,” J. Appl. Phys., vol. 47, pp. 5382-5386, Dec. 1976.
9. B. Zee, “Broadening mechanism in semiconductor (GaAs) lasers: Limitations to single mode power emission,” IEEE J. Quantum Electron., vol. QE-14, pp. 727-736, Oct. 1978.
10. A. Scott, “Nonlinear theory for laser diodes,” IEEE Trans. Electron Devices, vol. ED-11, pp. 41-46, Feb. 1964.
11. H. Statz, C. L. Tang, and J. M. Lavine, “Spectral output of semiconductor lasers,” J. Appl. Phys., vol. 35, pp. 2581-2585, Sept. 1964.
12. W. E. Lamb, Jr., “Theory of an optical maser,” Phys. Rev., vol. 134, pp. A1429-A1450, 1964.
13. N. Bloembergen, Nonlinear Optics. New York: Benjamin, 1965, p. 20.
14. M. Yamada, K. Hayano, H. Ishiguro, and Y. Suematsu, “An approximate analysis of gain suppression in injection lasers for band-to-band and band-to-impurity-level transitions,” Japan. J. Appl. Phys., vol. 18, pp. 1531-1541, Aug. 1979.
15. M. Yamada and Y. Suematsu, “A condition of single longitudinal mode operation in injection lasers with index-guiding structure,” IEEE J. Quantum Electron., vol. QE-15, pp. 743-749, Aug. 1979.
16. MCV, “Estimation of the intraband relaxation time in undoped AlGaAs injection laser,” Japan. J. Appl. Phys., vol. 19, pp. 135-142, Jan. 1980.
17. M. Yamada and Y. Suematsu, “Analysis of gain suppression in undoped injection lasers,” J. Appl. Phys., vol. 52, pp. 2653-2664, Apr. 1981.
18. M. Yamada and H. Ishiguro, “Gain calculation of undoped GaAs injection laser taking account of electronic intra-band relaxation,” Japan. J. Appl. Phys., vol. 20, pp. 1279-1288, July 1981.
19. M. Yamada and H. Nagato, “Analysis of longitudinal mode behavior around the threshold level in undoped injection lasers,” Trans. Inst. Electron. Commun. Eng. Japan, vol. E64, pp. 770-777, Dec. 1981.
20. M. Yamada and Y. Suematsu, “Relation between transverse mode control and longitudinal mode behavior in the injection laser,” Radio Sci., vol. 17, pp. 163-169, Jan.-Feb. 1982.
21. M. Yamada and T. Mizukami, “Theoretical conditions for single longitudinal mode operation under direct modulation in injection lasers,” Trans. Inst. Electron. Commun. Eng. Japan, vol. E65 pp. 614-620, Nov. 1982.
22. Y. Suematsu and M. Yamada, “Oscillation-modes and modecontrol in semiconductor lasers with stripe-geometry,” Trans. Inst. Electron. Commun. Eng. Japan, vol. 57-C, pp. 434-440, Nov. 1974 (Japanese).
23. W. O. Schlosser, “Gain-induced mode in planar structures,” Bell Syst. Tech. J., vol. 52, pp. 887-905, July-Aug. 1973.
24. D. D. Cook and F. R. Nash, “Gain-induced guiding and astigmatic output beam of GaAs lasers,” J. Appl. Phys., vol. 46, pp. 1660-1672, Apr. 1975.
25. Y. Nishimura and Y. Nishimura, “Spectral hole burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser,” IEEE J. Quantum Electron., vol. QE-9, pp. 1011-1019, Oct. 1973.
26. P. T. Lansberg, “Electron interaction effects on recombination spectra,” Phys. Status Solidi, vol. 15, pp. 623-626, 1966.
27. T. Ikegami, “Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasers,” IEEE J. Quantum Electron., vol. QE-8, pp. 470-476, June 1972.
28. E.A.J. Marcatili, “Dielectric rectangular waveguide and directional coupler for integrated optics,” Bell Syst. Tech. J., vol. 48, pp. 2071-2102, Sept. 1969.
29. K. Saito and R. Ito, “Buried-heterostructure AlGaAs lasers,” IEEE J. Quantum Electron., vol. QE-16, pp. 205-215, Feb. 1980.
30. J. Shah and R. F. Leheny, “Low-temperature absorption spectrum in GaAs in the presence of optical pumping,” Phys. Rev., vol. B-16, pp. 1577-1580, Aug. 1977.
31. Y. Nishimura, “Electron scattering times in GaAs injection lasers,” Japan. J. Appl. Phys., vol. 13, pp. 109-117, Jan. 1974.
32. M. Yamanishi, “Theory of electron relaxation times in semiconductor lasers,” Inst. Electron. Commun. Eng. Japan, Tech. Rep. OQE80-103, 1980, pp. 19-24 (Japanese).
33. M. Asada, A. R. Adams, K. E. Stubkjaer, Y. Suematsu, Y. Itaya, and S. Arai, “The temperature dependence of the threshold current of GaInAsP/InP DH lasers,” IEEE J. Quantum Electron., vol. QE-17, pp. 611-619, May 1981.
34. Y. Suematsu and K. Furuya, “Theoretical spontaneous emission factor of injection lasers,” Trans. Inst. Electron. Commun. Eng. Japan, vol. E60, pp. 467-472, Sept. 1972.
35. K. Petermann, “Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguide,” IEEE J. Quantum Electron., vol. QE-15, pp. 566-570, July 1979.
36. T. Sugino, K. Itoh, M. Wada, H. Schimizu, and I. Teramoto, “Fundamental transverse and longitudinal mode oscillation in terraced substrate GaAs-(GaAl)As lasers,” IEEE J. Quantum Electron., vol. QE-15, pp. 714-718, Aug. 1979.
37. R. F. Kazarinov, C. H. Henry, and R. A. Logan, “Longitudinal mode self-stabilization in semiconductor lasers,” J. Appl. Phys., vol. 53, pp. 4631-4644, July 1982.