메뉴 건너뛰기




Volumn 145, Issue 1, 1998, Pages 13-18

Effects of carrier heating, nonequilibrium LO phonons and lattice heating on small-signal modulation response of semiconductor lasers

Author keywords

Semiconductor lasers; Small signal analysis

Indexed keywords

CARRIER CONCENTRATION; LIGHT MODULATION; PHONONS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

EID: 0032000398     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19981720     Document Type: Article
Times cited : (5)

References (23)
  • 2
    • 0025503028 scopus 로고
    • N DEFONZO, A.P.: Theory of hot carrier effects on nonlinear gain in GaAs-GaAlAs lasers and amplifiers', IEEE J
    • GOMATAM, B.N., and DEFONZO, A.P.: Theory of hot carrier effects on nonlinear gain in GaAs-GaAlAs lasers and amplifiers', IEEE J. Quantum Electron., 1990, 26, pp. 1689-1703
    • (1990) Quantum Electron. , vol.26 , pp. 1689-1703
    • Gomatam, B.1
  • 3
    • 0026188774 scopus 로고
    • USKOV, A., MORK, J., OLESEN, H., TROMBORG, B JAUHO, A.P.Nonlinear gain suppression in semiconductor lasers due to carrier heating', IEEE Plwtonics Technol
    • WILLATZEN, M., USKOV, A., MORK, J., OLESEN, H., TROMBORG, B., and JAUHO, A.P.: 'Nonlinear gain suppression in semiconductor lasers due to carrier heating', IEEE Plwtonics Technol. Lett.. 1991, 3, pp. 606-609
    • (1991) Lett.. , vol.3 , pp. 606-609
    • Willatzen, M.1
  • 4
    • 0026899808 scopus 로고
    • TAKAHASHI, T ARAKAWA, Y.Nonlinear gain effects due to carrier heating and spectral hole burnina in strained-quantum well lasers', IEEE Pliotonics Technol
    • WILLATZEN, M., TAKAHASHI, T., and ARAKAWA, Y.: 'Nonlinear gain effects due to carrier heating and spectral hole burnina in strained-quantum well lasers', IEEE Pliotonics Technol. Lett., 1992, 4, pp. 682-685
    • (1992) Lett. , vol.4 , pp. 682-685
    • Willatzen, M.1
  • 5
    • 0005366865 scopus 로고
    • F RIDLEY, B.K.Hot carrier and the frequency response of quantum well lasers', J
    • LESTER, L.F., and RIDLEY, B.K.: 'Hot carrier and the frequency response of quantum well lasers', J. Appi Phys., 1992, 72, pp. 2579-2588
    • (1992) Appi Phys. , vol.72 , pp. 2579-2588
    • Lester, L.1
  • 6
    • 33746311332 scopus 로고
    • WILLANDER, M.Competition between carrier concentration and temperature influences on gain as means for improving modulation response of semiconductor laser', J
    • TOLSTIKHIN, V.l., and WILLANDER, M.: 'Competition between carrier concentration and temperature influences on gain as means for improving modulation response of semiconductor laser', J. Appl. Pliys., 1995, 77, pp. 488-493
    • (1995) Appl. Pliys. , vol.77 , pp. 488-493
    • Tolstikhin, V.L.1
  • 7
    • 0029309654 scopus 로고
    • WILLANDER, M.Carrier heating effects in dynamic-sinsle-frequency GalnAsP-InP laser diodes', IEEEJ
    • TOLSTIKHIN, V.l., and WILLANDER, M.: 'Carrier heating effects in dynamic-sinsle-frequency GalnAsP-InP laser diodes', IEEEJ. Quantum Electron., 1995, 31, pp. 814-833
    • (1995) Quantum Electron. , vol.31 , pp. 814-833
    • Tolstikhin, V.L.1
  • 8
    • 33746296899 scopus 로고    scopus 로고
    • WILLANDER, M.: Three-terminal lasers structures for high-speed modulation using variable carrier heating'
    • TOLSTIKHIN, V.l., and WILLANDER, M.: Three-terminal lasers structures for high-speed modulation using variable carrier heating'. SPIE Proceedincs 2693, Physics and simulation of optoelectronic devices IV, f995, pp. 2693-2759
    • SPIE Proceedincs , vol.995 , pp. 2693-2759
    • Tolstikhin, V.L.1
  • 9
    • 0027609069 scopus 로고
    • NAGARAJAN, R., TAUBER, D BOWERS, J.Reduction of damping in high-speed semiconductor lasers', IEEE Pliotonics Technol
    • WANG, G., NAGARAJAN, R., TAUBER, D., and BOWERS, J.: 'Reduction of damping in high-speed semiconductor lasers', IEEE Pliotonics Technol. Lett., 1993, 5, pp. 642-645
    • (1993) Lett. , vol.5 , pp. 642-645
    • Wang, G.1
  • 10
    • 0030086393 scopus 로고    scopus 로고
    • Y., TSAI, C.Y., SPENCER, R.M., LO, Y.H EASTMAN, L.F.Nonlinear gain coefficients in semiconductor lasers: Effects of carrier heating', IEEE J
    • TSAI, C.Y., TSAI, C.Y., SPENCER, R.M., LO, Y.H., and EASTMAN, L.F.: 'Nonlinear gain coefficients in semiconductor lasers: Effects of carrier heating', IEEE J. Quantum Electron., 1996, 32, pp. 201-212
    • (1996) Quantum Electron. , vol.32 , pp. 201-212
    • Tsai, C.1
  • 12
    • 0343941553 scopus 로고
    • K GUPTA, R.Nonelectronic scattermg of longitudinal optical phonons in bulk polar semiconductors', Phys
    • RIDLEY, B.K., and GUPTA, R.: 'Nonelectronic scattermg of longitudinal optical phonons in bulk polar semiconductors', Phys. Rev. B, 1991, 43, pp. 4939-4944
    • (1991) Rev. B , vol.43 , pp. 4939-4944
    • Ridley, B.1
  • 13
    • 0000540133 scopus 로고
    • SRIVASTAVA, G.P.: Theoretical study of the anharmonic decay of nonequilibrium of LO phonons in semiconductor structures', Phys
    • USHER, S., and SRIVASTAVA, G.P.: Theoretical study of the anharmonic decay of nonequilibrium of LO phonons in semiconductor structures', Phys. Re\: B, 1994, 50, pp. 1417914186
    • (1994) Re\: B , vol.50 , pp. 14179
    • Usher, S.1
  • 14
    • 4143081524 scopus 로고
    • BARONI, S MOLINARI, E.Anharmonic phonon lifetimes in semiconductors from densityfunctional perturbation theory', Phys
    • DEBERNARDI, A., BARONI, S., and MOLINARI, E.: 'Anharmonic phonon lifetimes in semiconductors from densityfunctional perturbation theory', Phys. Rev. Lett., 1995, 75, pp. 1819-1822
    • (1995) Rev. Lett. , vol.75 , pp. 1819-1822
    • Debernardi, A.1
  • 15
    • 33646424593 scopus 로고
    • GaAs, AIAs, and A^Ga/^As: Material parameters for use in research and device applications', J
    • ADACHI, S.: 'GaAs, AIAs, and A^Ga/^As: Material parameters for use in research and device applications', J. Appl. rhys., 1985, 58, pp. R1-R29
    • (1985) Appl. Rhys. , vol.58
    • Adachi, S.1
  • 17
    • 0029322930 scopus 로고
    • Y., TSAI, C.Y., LO, Y.H., SPENCER, R.M EASTMAN, L.F.Nonlinear gain coefficients in semiconductor quantum well lasers: Effects of carrier diffusion, capture, and escape', IEEE J
    • TSAI, C.Y., TSAI, C.Y., LO, Y.H., SPENCER, R.M., and EASTMAN, L.F.: 'Nonlinear gain coefficients in semiconductor quantum well lasers: Effects of carrier diffusion, capture, and escape', IEEE J. Sel. Topics Quantum Electron., 1995, 1, pp. 316-330
    • (1995) Sel. Topics Quantum Electron. , vol.1 , pp. 316-330
    • Tsai, C.1
  • 18
    • 0001392179 scopus 로고
    • Time-resolved investigation of coherent LOphonon in III-V semiconductors', Pliys
    • VALLÉE, F.: Time-resolved investigation of coherent LOphonon in III-V semiconductors', Pliys. Rev. B, 1994, 49, pp. 2460-2468
    • (1994) Rev. B , vol.49 , pp. 2460-2468
    • Vallée, F.1
  • 19
    • 3743070284 scopus 로고
    • O LURYI, S.High-frequency modulation and suppression of chirp in semiconductor lasers', Appl
    • GORFINKEL, V.O., and LURYI, S.: 'High-frequency modulation and suppression of chirp in semiconductor lasers', Appl. Pliys. Lett., 1993, 62, pp. 2923-2925
    • (1993) Pliys. Lett. , vol.62 , pp. 2923-2925
    • Gorfinkel, V.1
  • 22
    • 0028141269 scopus 로고
    • L CHEN, G.Challenges in microscale conductive and radiative heat transfer', ASME J
    • TIEN, C.L., and CHEN, G.: 'Challenges in microscale conductive and radiative heat transfer', ASME J. Heat Transf., 1994, 116, pp. 799-807
    • (1994) Heat Transf. , vol.116 , pp. 799-807
    • Tien, C.1
  • 23
    • 0031199354 scopus 로고    scopus 로고
    • Y TSAI, C.Y.Carrier density depinning above threshold in semiconductor lasers: Effects of carrier heating and spectral hole burning', IEE Proc
    • TSAI, C.Y., and TSAI, C.Y.: 'Carrier density depinning above threshold in semiconductor lasers: effects of carrier heating and spectral hole burning', IEE Proc. J. Optoeleclron., 1997, 144, pp. 209-212
    • (1997) J. Optoeleclron. , vol.144 , pp. 209-212
    • Tsai, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.