Depth-profiles in compositionally-graded amorphous silicon alloy thin films analyzed by real time spectroscopic ellipsometry

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 474-478

  Fujiwara, H ^a   Koh, Joohyun ^a   Collins, R W ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Amorphous silicon carbon alloys; Graded layers; Parameterization of dielectric functions; Spectroscopic ellipsometry

Indexed keywords

AMORPHOUS ALLOYS; AMORPHOUS FILMS; AMORPHOUS SILICON; APPROXIMATION THEORY; CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES OF SOLIDS; ELLIPSOMETRY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SPECTROSCOPIC ANALYSIS;

COMPOSITIONALLY GRADED AMORPHOUS SILICON CARBON ALLOY THIN FILMS; DIELECTRIC FUNCTIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); REAL TIME SPECTROSCOPIC ELLIPSOMETRY (RTSE); TAUC-LORENTZ (T L) MODEL;

THIN FILMS;

EID: 0032000204     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00867-5     Document Type: Article

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