Silicon-on-insulator wafer bonding-wafer thinning technological evaluations

Japanese Journal of Applied Physics

Volumn 28, Issue 8R, 1989, Pages 1426-1443

  Haisma, J ^a   Spierings, G A C M ^a   Biermann, U K P ^a   Pals, J A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Polishing techniques; Silicon on lnsulator; Thinning by automatic stopper; Thinning without automatic stopper; Van der Waals bonding; Wafer bonding wafer thinning

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

SILICON WAFERS; SILICON-ON-INSULATOR; TRIBOCHEMICAL POLISHING; VAN DER WAALS FORCES; WAFER BONDING; WAFER THINING;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0024717407     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.1426     Document Type: Article

References (30)

1. D. I. Pomerantz: U.S. Patent No. 3,397,278 dated August 13, 1968.
2. S. P. Wolsky, G. Wallis, D. I. Pomerantz and J. J. Dorsey: U.S. Patent No. 3,589,905 dated June 29, 1971.
3. R. C. Frye, J. E. Griffith and Y. H. Wong: J. Electrochem. Soc. 133 (1986) 1673.
4. T. R. Anthony: J. Appi. Phys. 58 (1985) 1240.
5. W. Y. Lee, F. Sequeda and J. Salem: Appi. Phys. Lett. 50 (1987) 522.
6. K. Burkart and M. Wintzer: U.S. Patent no. 4,247,034 dated Jan. 27, 1981.
7. J. B. Lasky: Appi. Phys. Lett. 48 (1986) 78.
8. M. Kimura, K. Egami, M. Kanamori and T. Hamaguchi: Appi. Phys. Lett. 43 (1983) 263.
9. M. Shimbo, K. Furukawa, K. Fukuda and K. Tanzawa: Appi. Phys. Lett. 60 (1986) 2987.
10. J. Ohura, T. Tsukakoshi, K. Fukuda, M. Shimbo and H. Ohashi: IEEE Electron Device Letters EDL-8 (1987) 454.
11. European Patent Application 0 217 288: Date of publication: 08.04.87.
12. I. E. Dzyaloshinskii, E. M. Lifshitz and L. P. Pitaevskii: Adv. Phys. 10 (1961) 165.
13. B. V. Derjaguin, N. V. Churaw and Ya. L. Rabinovick: Adv. Colloid Interface Sci. 28 (1988) 197.
14. J. A. E. Taylor, J. A. Hockey and B. Pethica: Proc. Brit. Ceram. Soc. 5 (1965) 133.
15. J. Haisma, C. L. Adema, C. L. Alting and R. Brehm: U. S. Patent No. 4, 810, 318 dated March 7, 1989.
16. H. G. van Bueren, J. Haisma and H. de Lang: Physics Lett. 2 (1962) 340.
17. H. van Dijk: J. Electrochem. Soc. 117 (1970) 553.
18. H. A. Waggener: Bell Syst. Tech. J. 49 (1970) 473.
19. J. B. Price: Semiconductor Silicon 1973, eds. H. R. Huff and R. R. Burgess (The Electrochemical Soc., Princeton NJ, 1973) pp. 339-353.
20. H. Muraoka, T. Okhashi and Y. Sumitomo: Semiconductor Silicon 1973, eds. H. R. Huff and R. R. Burgess (The Electrochemical Soc., Princeton NJ, 1973) pp. 327-338.
21. J. v.d. Meerakker: Private communication.
22. M. W. M. Graef, B. J. H. Leunissen and H. H. C. de Moor: J. Electrochem. Soc. 132 (1985) 1942.
23. A. S. Grove, A. Roder and C. T. Sah: J. Appl. Phys. 36 (1963) 1065.
24. C. O. Thomas, D. Kahug and R. C. Manz: J. Electrochem. Soc. 109 (1962) 1055.
25. E. Kasper and H. -J. Herzog: Thin Solid Films 44 (1977) 357.
26. P. M. Sarro and A. W. van Herwaarden: J. Electrochem. Soc. 133 (1986) 1724.
27. K. D. Beyer, E. Mendel, W. A. Plishkin and J. Riseman: IBM-disclosure bulletin 27 (1985) 4700.
28. W. R. Morcom and Th. J. Sanders: U.S.A. Patent No. 3, 979, 237 dated Sept. 7, 1976.
29. G. Winkler: Magnetic Garnets, Vieweg Tracts in Pure and Applied Physics (Vieweg, Braunschweig, 1981).
30. M. Lemonnier C. Piaget: L’Onde Electrique 67 (1987) 99.