Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

Vacuum

Volumn 49, Issue 2, 1998, Pages 139-143

  Yang, X ^a,b   Wu, Z ^a,b   Zhao, J ^a   Wang, H ^a   Huang, D ^b   Qin, F ^b  

^a BEIJING NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CERIUM COMPOUNDS; COMPUTER SIMULATION; EPITAXIAL GROWTH; FILM GROWTH; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; X RAY DIFFRACTION ANALYSIS;

DEPTH PROFILE MEASUREMENT; ION BEAM EPITAXY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0031988749     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(97)00151-6     Document Type: Article

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