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Volumn 1, Issue , 1996, Pages 186-190

Comparison between two measuring methods for complete characterization of low-noise HEMTs at microwaves

Author keywords

[No Author keywords available]

Indexed keywords

INDUSTRIAL APPLICATIONS; SCATTERING PARAMETERS;

EID: 0043281980     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1996.337549     Document Type: Conference Paper
Times cited : (4)

References (8)
  • 2
    • 0028466069 scopus 로고
    • The determination of the noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test set
    • July
    • G. Martines, M. Sannino, "The determination of the noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test set", IEEE Trans. on Microwave Theory and Techniques, pp. 1105-1113, July 1994.
    • (1994) IEEE Trans. on Microwave Theory and Techniques , pp. 1105-1113
    • Martines, G.1    Sannino, M.2
  • 5
    • 0021391036 scopus 로고
    • Characterization of GaAs FET's in terms of noise, gain and scattering parameters through a noise parameter test set
    • March
    • E. Calandra, G. Martines, M. Sannino, "Characterization of GaAs FET's in terms of noise, gain and scattering parameters through a noise parameter test set", IEEE Trans. on Microwave Theory and Techniques, vol. MTT-32, pp. 231-237, March 1984.
    • (1984) IEEE Trans. on Microwave Theory and Techniques , vol.MTT-32 , pp. 231-237
    • Calandra, E.1    Martines, G.2    Sannino, M.3
  • 6
    • 0024738288 scopus 로고
    • Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
    • Sept.
    • M. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence", IEEE Trans. Microwave Theory Tech., vol. MTf-37, pp. 1340-1350, Sept.1989.
    • (1989) IEEE Trans. Microwave Theory Tech. , vol.MTF-37 , pp. 1340-1350
    • Pospieszalski, M.1
  • 7
    • 0027092244 scopus 로고
    • Direct extraction of all four transistor noise parameters from a single noise figure measurement
    • Helsinki, Finland, Aug.
    • P. Tasker, W. Reinert, J. Braunstein, M. Schlechtweg, "Direct extraction of all four transistor noise parameters from a single noise figure measurement", Proc. 22nd European Microwave Conference, Helsinki, Finland, pp. 157-162, Aug. 1992.
    • (1992) Proc. 22nd European Microwave Conference , pp. 157-162
    • Tasker, P.1    Reinert, W.2    Braunstein, J.3    Schlechtweg, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.