Monte Carlo simulation of the growth of metallic quantum dots

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 515-518

  Boero, M ^a   Mulheran, P A ^b   Inkson, J C ^a  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b UNIVERSITY OF READING   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRIC CONTACTS; MONTE CARLO METHODS; NANOTECHNOLOGY; TEMPERATURE;

COULOMB BLOCKADE PHENOMENON; METALLIC QUANTUM DOTS;

DEPOSITION;

EID: 0031710319     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00120-8     Document Type: Article

References (4)

1. W. Chen and H. Ahmed, Appl. Phys. Lett., 66, 3383 (1995)
2. C. Vieu, M.Mejias, F. Carcenac, G.Faini, H. Launois, Microelectronic, Engineering, 35, 253 (1997)
3. M.Mejias, C. Lebreton, C. Vieu, A. Pepin, F. Carcenac, H. Launois, M. Boero, this volume.
4. P.A. Mulheran and J.A. Blackman, Phil. Mag. Lett 72, 55 (1995)