0.12 μm optical lithography performances using an alternating DUV Phase Shift mask

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 61-64

  Trouiller, Y ^a   Buffet, N ^a   Mourier, T ^a   Schiavone, P ^b   Quere, Y ^a  

^a CEA LETI   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; OPTICS; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE; TECHNOLOGY;

DUV PHASE SHIFT MASK;

LITHOGRAPHY;

EID: 0031707676     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00013-6     Document Type: Article

References (4)

1. P.Schiavone and F.Lalanne. "0.2 μm lithography using 1-Line and alternating phase shift mask", SPIE vol 2726 pp 453-426, 1996.
2. MD Levenson. " Phase shift mask strategies: isolated dark lines", Microlithography world pp 6-11 march-april 1992.
3. O.Joubert et al. "PhaseShifting Mask and Top imaging resist for sub-half micron Deep-UV lithography", Microelectronic Engineering pp 75-78 1992.
4. T.Ogawa et al. "Practical resolution enhancement effect by new complete anti-reflective in KrF excimer laser lithography", SPIE vol 1927 pp 263-274 1993