0.2 μm lithography using I-line and alternating phase shift mask

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2726, Issue , 1996, Pages 453-460

  Schiavone, P ^a   Lalanne, F ^a  

^a ORANGE LABS   (France)

Author keywords

Alternating phase shift mask; Electrical CD; I line; Optical lithography; Partial coherence; Sub micron lithography

Indexed keywords

ATOMIC FORCE MICROSCOPY; COHERENT LIGHT; MASKS; PHASE SHIFT; TRANSISTORS;

PHASE SHIFT MASKS (PSM); SUB-MICRON LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0030314890     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240917     Document Type: Conference Paper

References (6)

1. Phase shifting mask strategies: Isolated dark lines
2. Application of alternating-type PSM to polysilicon level for random logic circuits
3. Sub-quater micron gate pattern fabrication using a transparent phase-shifting mask
4. Electrical test methods for evaluating lithographic process and equipment
5. Critical dimension atomic force microscopy for 0.25μm process development
6. SiOxNy:H high performance anti reflective layer for the current and future optical lithography