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Volumn 183, Issue 1-2, 1998, Pages 269-273

Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL ORIENTATION; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES;

GERMANIUM PHOTOCOUNTING DETECTORS; INDIUM GALLIUM ARSENIC PHOSPHIDE;

HETEROJUNCTIONS;

EID: 0031702533 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00500-9 Document Type: Letter

Times cited : (7)

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